Characteristics STTH112-Y
2/7 DocID025888 Rev 1
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.25 x I
F(AV)
+ 0.30 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at T
j
= 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 1200 V
I
F(AV)
Average forward current T
L
= 135 °C, δ = 0.5 1 A
I
FSM
Forward Surge current t
p
= 8.3 ms 18 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
Operating temperature range -40 to + 175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead 20 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: tp = 5 ms, δ < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
5
µA
T
j
= 125 °C 1 50
V
F
(2)
2. Pulse test: tp = 380 µs, δ < 2%
Forward voltage drop
T
j
= 25 °C
I
F
= 1 A
1.9
V
T
j
= 150 °C 1.10 1.55
Table 5. Dynamic electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time T
j
= 25 °C
I
F
= 0.5 A, I
rr
= 0.25 A
I
R
= 1 A
53 75
ns
t
fr
Forward recovery time
T
j
= 25 °C
I
F
= 1 A, dI
F
/dt = 50 A/µs
V
FR
= 4.5 V
500
V
FP
Forward recovery
voltage
20 30 V
