PZM3.0NB2A,115

1999 Jun 11 4
Philips Semiconductors Product specification
Voltage regulator double diodes PZM-NA series
ELECTRICAL CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage I
F
= 10 mA; see Fig.2 0.9 V
I
F
= 100 mA; see Fig.2 1.1 V
I
R
reverse current
PZM2.4NBA V
R
=1V 50 µA
PZM2.7NB2A V
R
=1V 20 µA
PZM3.0NB2A V
R
=1V 10 µA
PZM3.3NB2A V
R
=1V 5 µA
PZM3.6NB2A V
R
=1V 5 µA
PZM3.9NB2A V
R
=1V 3 µA
PZM4.3NB2A V
R
=1V 3 µA
PZM4.7NB2A V
R
=1V 3 µA
PZM5.1NB2A V
R
= 1.5 V 3 µA
PZM5.6NB2A V
R
= 2.5 V 2 µA
PZM6.2NB2A V
R
= 3.0 V 2 µA
PZM6.8NB2A V
R
= 3.5 V 2 µA
PZM7.5NB2A V
R
= 4.0 V 1 µA
PZM8.2NB2A V
R
= 5.0 V 700 nA
PZM9.1NB2A V
R
= 6.0 V 500 nA
PZM10NB2A V
R
= 7.0 V 200 nA
PZM11NB2A V
R
= 8.0 V 100 nA
PZM12NB2A V
R
= 9.0 V 100 nA
PZM13NB2A V
R
= 10.0 V 100 nA
PZM15NB2A V
R
= 11.0 V 70 nA
1999 Jun 11 5
Philips Semiconductors Product specification
Voltage regulator double diodes PZM-NA series
Table 1 Per type; PZM2.4N to PZM24N
T
j
=25°C unless otherwise specified.
PZM
-XXX
WORKING
VOLTAGE V
Z
(V)
at I
Z
= 5 mA;
t
m
= 40 ms;
T
amb
=25°C
DIFFERENTIAL RESISTANCE
r
dif
()
TEMP.
COEFF.
S
Z
(mV/K)
at
I
Z
=5mA
DIODE
CAP.
C
d
(pF)
at
f = 1 MHz;
V
R
=0
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
(A)
at t
p
= 100 µs
I
Z
= 1 mA I
Z
=5mA
MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.
2.4NBA 2.30 2.60 275 400 70 100 1.6 450 8.00
2.7NB2A 2.65 2.90 300 450 75 100 2.0 440 8.00
3.0NB2A 2.95 3.20 325 500 80 95 2.1 425 8.00
3.3NB2A 3.25 3.50 350 500 85 95 2.4 410 8.00
3.6NB2A 3.55 3.80 375 500 85 90 2.4 390 8.00
3.9NB2A 3.87 4.10 400 500 85 90 2.5 370 8.00
4.3NB2A 4.15 4.34 410 600 80 90 2.5 350 8.00
4.7NB2A 4.55 4.75 425 500 50 80 1.4 325 8.00
5.1NB2A 4.98 5.20 400 480 40 60 0.8 300 8.00
5.6NB2A 5.49 5.73 80 400 15 40 1.2 275 8.00
6.2NB2A 6.06 6.33 40 150 6 10 2.3 250 8.00
6.8NB2A 6.65 6.93 30 80 6 15 3.0 215 8.00
7.5NB2A 7.28 7.60 15 80 2 10 4.0 170 3.50
8.2NB2A 8.02 8.36 20 80 2 10 4.6 150 3.50
9.1NB2A 8.85 9.23 20 100 2 10 5.5 120 3.50
10NB2A 9.77 10.21 20 150 2 10 6.4 110 3.50
11NB2A 10.76 11.22 25 150 2 10 7.4 110 3.00
12NB2A 11.74 12.24 25 150 2 10 8.4 105 3.00
13NB2A 12.91 13.49 25 170 2 10 9.4 105 2.50
15NB2A 14.34 14.98 25 200 3 15 11.4 100 2.00
1999 Jun 11 6
Philips Semiconductors Product specification
Voltage regulator double diodes PZM-NA series
GRAPHICAL DATA
Fig.2 Forward current as a function of forward
voltage; typical values.
T
j
=25°C.
handbook, halfpage
0.6 1.0
300
100
0
200
MBG781
0.8
V
F
(V)
I
F
(mA)
Fig.3 Temperature coefficient as a function of
working current; typical values.
PZM2.4NBA to PZM4.3NB2A.
T
j
=25°Cto150°C.
handbook, halfpage
060
0
2
3
1
MBG783
20 40
I
Z
(mA)
S
Z
(mV/K)
4V3
3V9
3V6
3V0
2V4
2V7
3V3
Fig.4 Temperature coefficient as a function of
working current; typical values.
PZM4.7NB2A to PZM12NB2A.
T
j
=25°Cto150°C.
handbook, halfpage
02016
10
0
5
5
MBG782
4812
I
Z
(mA)
S
Z
(mV/K)
4V7
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
Fig.5 Power derating curve per diode.
handbook, halfpage
0
300
200
100
0
50
P
(mW)
100 200
150
T
amb
(°C)
MDA988

PZM3.0NB2A,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
DIODE ZENER 3V 220MW SMT3
Lifecycle:
New from this manufacturer.
Delivery:
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