MMBTA13 / MMBTA14
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Types Available (MMBTA63
/MMBTA64)
• Ideal for Medium Power Amplification and Switching
• High Current Gain
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• MMBTA13 Marking (See Page 3): K2D, K3D
• MMBTA14 Marking (See Page 3): K3D
• Ordering & Date Code Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α
0° 8°
All Dimensions in mm
A
E
J
L
TOP VIEW
M
B
C
C
BE
H
G
D
K
E
B
C
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
30 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
10 V
Collector Current - Continuous
I
C
300 mA
Power Dissipation (Note 1)
P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θ
JA
417
°CW
Operating and Storage and Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
V
(BR)CEO
30
⎯
V
I
C
= 100μA V
BE
= 0V
Collector Cutoff Current
I
CBO
⎯
100 nA
V
CB
= 30V, I
E
= 0
Emitter Cutoff Current
I
EBO
⎯
100 nA
V
EB
= 10V, I
C
= 0
ON CHARACTERISTICS (Note 2)
DC Current Gain MMBTA13
MMBTA14
MMBTA13
MMBTA14
h
FE
5,000
10,000
10,000
20,000
⎯ ⎯
I
C
= 10mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 5.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
1.5 V
I
C
= 100mA, I
B
= 100μA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
2.0 V
I
C
= 100mA, V
CE
= 5.0V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
8.0 Typical pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
15 Typical pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Current Gain-Bandwidth Product
f
T
125
⎯
MHz
V
CE
= 5.0V, I
C
= 10mA, f = 100MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2: Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
DS30047 Rev. 11 - 2 1 of 3
www.diodes.com
MMBTA13 / MMBTA14
© Diodes Incorporated
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