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VT3080C-M3/4W

P1-P3P4-P5
VT3080C, VIT3080C
www.vishay.com
Vishay General Semiconductor
Revision: 14-Dec-16
1
Document Number: 89241
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.46 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ingp diode, and
reserve battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 15 A
V
RRM
80 V
I
FSM
150 A
V
F
at I
F
= 15 A 0.65 V
T
J
max. 150 °C
Package TO-220AB, TO-262AA
Diode variation Dual common cathode
TO-220AB
1
2
3
1
K
2
3
TO-262AA
TMBS
®
PIN 1
PIN 2
PIN 3
K
PIN 1
PIN 2
CASE
PIN 3
VT3080C VIT3080C
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT3080C VIT3080C UNIT
Maximum repetitive peak reverse voltage V
RRM
80 V
Maximum average forward rectified current
(fig. 1)
per device
I
F(AV)
30
A
per diode 15
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
150 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
VT3080C, VIT3080C
www.vishay.com
Vishay General Semiconductor
Revision: 14-Dec-16
2
Document Number: 89241
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.52 -
V
I
F
= 7.5 A 0.58 -
I
F
= 15 A 0.75 0.82
I
F
= 5 A
T
A
= 125 °C
0.46 -
I
F
= 7.5 A 0.52 -
I
F
= 15 A 0.65 0.70
Reverse current per diode V
R
= 80 V
T
A
= 25 °C
I
R
(2)
30 700 μA
T
A
= 125 °C 20 35 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VT3080C VIT3080C UNIT
Typical thermal resistance
per diode
R
JC
2.5
°C/W
per device 2.0
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB VT3080C-M3/4W 1.89 4W 50/tube Tube
TO-262AA VIT3080C-M3/4W 1.46 4W 50/tube Tube
TO-220AB
(1)
VT3080CHM3/4W 1.89 4W 50/tube Tube
TO-262AA
(1)
VIT3080CHM3/4W 1.46 4W 50/tube Tube
VT3080C, VIT3080C
www.vishay.com
Vishay General Semiconductor
Revision: 14-Dec-16
3
Document Number: 89241
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Dissipation Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Typical Junction Capacitance
Case Temperature (°C)
35
25
0
0 75 175
Average Forward Current (A)
25 100 150
5
50 125
10
30
20
Resistive or Inductive Load
15
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
Average Forward Current (A)
14
0
08 18
Average Power Loss (W)
212
2
41661014
8
4
D = t
p
/T t
p
T
6
D = 0.8
12
10
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
Instantaneous Forward Voltage (V)
100
0.1
0 0.6 1.2
Instantaneous Forward Current (A)
0.2 0.8
1
0.4 1.0
T
A
= 100 °C
10
Percent of Rated Peak Reverse Voltage (%)
100
0.001
20 40 100
Instantaneous Reverse Current (mA)
50
1
30 60
10
9070
0.1
0.01
80
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
t - Pulse Duration (s)
10
0.1
0.01 10 100
Transient Thermal Impedance (°C/W)
0.1 1
Junction to Case
1
Reverse Voltage (V)
10 000
10
0.1 100
Junction Capacitance (pF)
1
100
10
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1000
P1-P3P4-P5

VT3080C-M3/4W

Mfr. #:
Buy VT3080C-M3/4W
Manufacturer:
Vishay / Siliconix
Description:
Rectifiers 30A,80V,TRENCH SKY RECT.
Lifecycle:
New from this manufacturer.
Delivery:
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