VS-6EWH06FNHM3
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Vishay Semiconductors
Revision: 10-Jul-15
1
Document Number: 94740
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultralow V
F
Ultrafast Rectifier, 6 A FRED Pt
®
FEATURES
• Hyperfast recovery time, reduced Q
rr
and soft
recovery
• 175 °C maximum operating junction temperature
• For PFC CRM/CCM operation
• Low forward voltage drop
• Low leakage current
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC/DC section of SMPS inverters or as freewheeling
diodes. Their extremely optimized stored charge and low
recovery current minimize the switching losses and reduce
over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-252AA (D-PAK)
I
F(AV)
6 A
V
R
600 V
V
F
at I
F
1.26 V
t
rr
(typ.) 18 ns
T
J
max. 175 °C
Diode variation Single die
2, 4
3
Anode
1
N/C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 144 °C 6
ANon-repetitive peak surge current I
FSM
T
J
= 25 °C 70
Peak repetitive forward current I
FM
T
C
= 144 °C, f = 20 kHz, d = 50 % 12
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 6 A - 1.60 2.1
I
F
= 6 A, T
J
= 150 °C - 1.26 1.7
Reverse leakage current I
R
V
R
= V
R
rated - - 50
μA
T
J
= 150 °C, V
R
= V
R
rated - - 250
Junction capacitance C
T
V
R
= 600 V - 3.5 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8 - nH
