VS-15TQ060STRL-M3

VS-15TQ060S-M3
www.vishay.com
Vishay Semiconductors
Revision: 22-Apr-14
1
Document Number: 94927
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 15 A
FEATURES
150 °C T
J
operation
Very low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Designed and qualified according to JEDEC
®
-JESD 47
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-15TQ060S-M3 Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
15 A
V
R
60 V
V
F
at I
F
0.56 V
I
RM
max. 45 mA at 125 °C
T
J
max. 150 °C
E
AS
6 mJ
Package TO-263AB (D
2
PAK)
Diode variation Single die
Anode
1
3
Base
cathode
2
N/C
D
2
PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 15 A
V
RRM
60 V
I
FSM
t
p
= 5 μs sine 1000 A
V
F
15 A
pk
, T
J
= 125 °C 0.56 V
T
J
Range -55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-15TQ060S-M3 UNITS
Maximum DC reverse voltage V
R
60 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 104 °C, rectangular waveform 15 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
1000
A
10 ms sine or 6 ms rect. pulse 260
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1.5 A, L = 11.5 mH 6 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.50 A
VS-15TQ060S-M3
www.vishay.com
Vishay Semiconductors
Revision: 22-Apr-14
2
Document Number: 94927
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
15 A
T
J
= 25 °C
0.62
V
30 A 0.82
15 A
T
J
= 125 °C
0.56
30 A 0.71
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.80
mA
T
J
= 125 °C 45
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 720 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
3.25
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style D
2
PAK 15TQ060S
VS-15TQ060S-M3
www.vishay.com
Vishay Semiconductors
Revision: 22-Apr-14
3
Document Number: 94927
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
100
I
F
- Instantaneous Forward
Current (A)
V
FM
- Forward Voltage Drop (V)
0 0.4 0.8 1.2 1.6 2.0
1000
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
01020
30
60
0.01
0.1
1
10
100
50
0.001
40
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
02030
40
50
100
1000
10
T
J
= 25 °C
60
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

VS-15TQ060STRL-M3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - D2PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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