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DMN30H4D0L-7

P1-P3P4-P6
DMN30H4D0L
Document number: DS36313 Rev. 2 - 2
1 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMN30H4D0L
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
300V
4 @ V
GS
= 10V
0.25A
4 @ V
GS
= 4.5V
0.25A
Description and Applications
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Description and Applications
DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
Features and Benefits
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN30H4D0L-7 SOT23 3,000/Tape & Reel
DMN30H4D0L-13 SOT23 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2013 2014 2015 2016 2017 2018 2019
Code A B C D E F G
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
D
G
S
Top View
Pin Configuration
e3
Equivalent Circuit
D
S
G
2H = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2H
2H
DMN30H4D0L
Document number: DS36313 Rev. 2 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMN30H4D0L
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
300 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
0.25
0.20
A
Pulsed Drain Current (10s pulse, duty cycle ≦1%)
I
DM
2 A
Maximum Body Diode Continuous Current (Note 6)
I
S
0.8 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
0.31
W
(Note 6) 0.47
Thermal Resistance, Junction to Ambient
(Note 5)
R
JA
377
°C/W
(Note 6) 255
Thermal Resistance, Junction to Case
(Note 6)
R
JC
81
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
300
V
V
GS
= 0V,
I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
1.0 µA
V
DS
= 240V,
V
GS
= 0V
Gate-Body Leakage
I
GSS
±100 nA
V
GS
=
±20V,
V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1
3 V
V
DS
= V
GS
,
I
D
= 250 µA
Static Drain-Source On-Resistance
R
DS(ON)
2.1 4
V
GS
= 10V,
I
D
=
0.3A

2.1 4
V
GS
= 4.5V,
I
D
=
0.2A

3.8 6
V
GS
= 2.7V,
I
D
=
0.1A
Diode Forward Voltage
V
SD
0.7 1.2 V
V
GS
= 0V, I
S
= 0.3A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
187.3
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
11.7
Reverse Transfer Capacitance
C
rss
8.7
Total Gate Charge
Q
g
7.6
nC
V
DS
= 192V, V
GS
= 10V,
I
D
= 0.5A
Gate-Source Charge
Q
gs
0.5
Gate-Drain Charge
Q
gd
3.3
Turn-On Delay Time
t
D(on)
4.9
nS
V
DS
= 60V, R
L
=200
V
GS
= 10V, R
G
= 25
Turn-On Rise Time
t
r
4.7
Turn-Off Delay Time
t
D(off)

25.8

Turn-Off Fall Time
t
f

17.5

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN30H4D0L
Document number: DS36313 Rev. 2 - 2
3 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMN30H4D0L
NEW PRODUCT
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.0
0.2
0.4
0.6
0.8
1.0
012345
V= 2.5V
GS
V= 3.0V
GS
V= 3.5V
GS
V= 4.5V
GS
V = 10V
GS
V= 2.2V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R , DRAIN-S
O
URCE
O
N-RESISTANCE ( )
DS(ON)
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0 0.1 0.2 0.3 0.4 0.5
V = 4.5V
GS
V = 10V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristics
R
,
D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
2
2.5
3
3.5
4
4.5
5
5.5
6
0 2 4 6 8 101214161820
I = 200mA
D
I = 300mA
D
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
0
1
2
3
4
5
6
7
8
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
R
,
D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0
0.5
1
1.5
2
2.5
3
V=5V
I = 200mA
GS
D
V=V
I = 400mA
GS
D
10
P1-P3P4-P6

DMN30H4D0L-7

Mfr. #:
Buy DMN30H4D0L-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-Ch Enh FET 300V 20Vgs 0.25A 0.31W
Lifecycle:
New from this manufacturer.
Delivery:
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