BCR 198L3 E6327

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P17

2006-05-03

1

BCR198...

PNP Silicon Digital Transistor

• Switching circuit, inverter, interface circuit,

driver circuit

• Built in bias resistor (R1 = 47 kΩ , R2 = 47 kΩ )

• BCR198S: Two internally isolated

transistors with good matching

in one multichip package

• BCR198S: For orientation in reel see

package information below

BCR198/F/L3

BCR198T/W

BCR198S

EHA07183

3

21

C

EB

R

1

R

2

EHA07173

6 54

321

C1 B2 E2

C2B1E1

1

R

R

2

R

1

R

2

TR1

TR2

Type Marking Pin Configuration Package

BCR198

BCR198F

BCR198L3

BCR198S

BCR198T

BCR198W

WRs

WRs

WR

WRs

WR

WRs

1=B

1=B

1=B

1=E1

1=B

1=B

2=E

2=E

2=E

2=B1

2=E

2=E

3=C

3=C

3=C

3=C2

3=C

3=C

-

-

-

4=E2

-

-

-

-

-

5=B2

-

-

-

-

-

6=C1

-

-

SOT23

TSFP-3

TSLP-3-4

SOT363

SC75

SOT323

2006-05-03

2

BCR198...

Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage V

CEO

50 V

Collector-base voltage V

CBO

50

Input forward voltage V

i(fwd)

80

Input reverse voltage V

i(rev)

10

Collector current I

C

70 mA

Total power dissipation-

BCR198, T

S

≤ 102°C

BCR198F, T

S

≤ 128°C

BCR198L3, T

S

≤ 135°C

BCR198S, T

S

≤ 115°C

BCR198T, T

S

≤ 109°C

BCR198W, T

S

≤ 124°C

P

tot

200

250

250

250

250

250

mW

Junction temperature T

j

150 °C

Storage temperature T

stg

-65 ... 150

Thermal Resistance

Parameter

Symbol Value Unit

Junction - soldering point

1)

BCR198

BCR198F

BCR198L3

BCR198S

BCR198T

BCR198W

R

thJS

≤ 240

≤ 90

≤ 60

≤ 140

≤ 165

≤ 105

K/W

1

For calculation of R

thJA

please refer to Application Note Thermal Resistance

2006-05-03

3

BCR198...

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

C

= 100 µA, I

B

= 0

V

(BR)CEO

50 - -

V

Collector-base breakdown voltage

I

C

= 10 µA, I

E

= 0

V

(BR)CBO

50 - -

Collector-base cutoff current

V

CB

= 40 V, I

E

= 0

I

CBO

- - 100 nA

Emitter-base cutoff current

V

EB

= 10 V, I

C

= 0

I

EBO

- - 164 µA

DC current gain

1)

I

C

= 5 V, V

CE

= 5 V

h

FE

70 - - -

Collector-emitter saturation voltage

1)

I

C

= 10 mA, I

B

= 0.5 mA

V

CEsat

- - 0.3 V

Input off voltage

I

C

= 100 µA, V

CE

= 5 V

V

i(off)

0.8 - 1.5

Input on voltage

I

C

= 2 mA, V

CE

= 0.3 V

V

i(on)

1 - 3

Input resistor R

1

32 47 62 kΩ

Resistor ratio R

1

/R

2

0.9 1 1.1 -

AC Characteristics

Transition frequency

I

C

= 10 mA, V

CE

= 5 V, f = 100 MHz

f

T

- 190 - MHz

Collector-base capacitance

V

CB

= 10 V, f = 1 MHz

C

cb

- 3 - pF

1

Pulse test: t < 300µs; D < 2%

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P17

BCR 198L3 E6327

Mfr. #:

Buy BCR 198L3 E6327

Manufacturer:

Infineon Technologies

Description:

TRANS PREBIAS PNP 250MW TSLP-3

Lifecycle:

New from this manufacturer.

Delivery:

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