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IXFK210N17T

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK210N17T
IXFX210N17T
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
220
240
3.03.54.04.55.05.56.06.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
180
200
220
240
0 25 50 75 100 125 150 175 200 225 250
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
50
100
150
200
250
300
350
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 25 50 75 100 125 150 175 200 225 250 275 300
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 85V
I
D
= 105A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
100µs
1ms
R
DS(on)
Limit
25µs
© 2009 IXYS CORPORATION, All Rights Reserved
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXFK210N17T
IXFX210N17T
IXYS REF:F_210N17T(9W)4-02-09
P1-P3P4-P5

IXFK210N17T

Mfr. #:
Buy IXFK210N17T
Manufacturer:
Description:
MOSFET N-CH 170V 210A TO-264
Lifecycle:
New from this manufacturer.
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