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IXFR44N50Q3

P1-P3P4-P5
© 2012 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 500 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ 500 V
V
GSS
Continuous ±30 V
V
GSM
Transient ±40 V
I
D25
T
C
= 25°C 25 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
130 A
I
A
T
C
= 25°C 44A
E
AS
T
C
= 25°C 1.5 J
dv/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 50 V/ns
P
D
T
C
= 25°C 300 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10s 260 °C
V
ISOL
50/60 Hz, 1 Minute 2500 V∼
F
C
Mounting Force 20..120/4.5..27 N/lb.
Weight 5 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 1mA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA 3.5 6.5 V
I
GSS
V
GS
= ±30V, V
DS
= 0V ±100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 25 μA
T
J
= 125°C 1 mA
R
DS(on)
V
GS
= 10V, I
D
= 22A, Note 1 154 mΩ
HiperFET
TM
Power MOSFET
Q3-Class
IXFR44N50Q3
V
DSS
= 500V
I
D25
= 25A
R
DS(on)
≤≤
≤≤
≤ 154m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 250ns
DS100382A(05/12)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Features
z
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z
Isolated Mounting Surface
z
Low Intrinsic Gate Resistance
z
2500V~ Electrical Isolation
z
Fast Intrinsic Rectifier
z
Avalanche Rated
z
Low Package Inductance
Advantages
z
High Power Density
z
Easy to Mount
z
Space Savings
Applications
z
DC-DC Converters
z
Battery Chargers
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC Choppers
z
Temperature and Lighting Controls
(Electrically Isolated Tab)
G = Gate D = Drain
S = Source
ISOPLUS247
E153432
G
S
D
Isolated Tab
Preliminary Technical Information
IXFR44N50Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
1 = Gate
2,4 = Drain
3 = Source
ISOPLUS247 (IXFR) Outline
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 20V, I
D
= 22A, Note 1 17 28 S
C
iss
4800 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 625 pF
C
rss
56 pF
R
Gi
Gate Input Resistance 0.13 Ω
t
d(on)
30 ns
t
r
13 ns
t
d(off)
37 ns
t
f
9 ns
Q
g(on)
93 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 22A 34 nC
Q
gd
44 nC
R
thJC
0.41 °C/W
R
thCS
TO-247 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 44 A
I
SM
Repetitive, Pulse Width Limited by T
JM
176 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.4 V
t
rr
250 ns
I
RM
13.2
A
Q
RM
1.4 μC
I
F
= 22A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 22A
R
G
= 2Ω (External)
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2012 IXYS CORPORATION, All Rights Reserved
IXFR44N50Q3
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
45
01234567
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8
V
7
V
6
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
100
0 5 10 15 20 25
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9
V
7
V
8
V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
5
10
15
20
25
30
35
40
45
0 2 4 6 8 10 12 14 16
V
DS
- Volts
I
D
- Amperes
6
V
5V
V
GS
= 10V
8V
7
V
Fig. 4. R
DS(on)
Normalized to I
D
= 22A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50-250255075100125150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 44A
I
D
= 22A
Fig. 5. R
DS(on)
Normalized to I
D
= 22A Value vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
0 102030405060708090100
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
5
10
15
20
25
30
-50-25 0 255075100125150
T
C
- Degrees Centigrade
I
D
- Amperes
P1-P3P4-P5

IXFR44N50Q3

Mfr. #:
Buy IXFR44N50Q3
Manufacturer:
Littelfuse
Description:
MOSFET Q3Class HiPerFET Pwr MOSFET 500V/25A
Lifecycle:
New from this manufacturer.
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