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1N3210

P1-P2
V
RRM
= 50 V - 600 V
I
F
= 15 A
Features
• High Surge Capability DO-5 Package
• Types up to 600 V V
RRM
Parameter Symbol 1N3208 (R) 1N3209 (R) Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
50 100 V
1N3208 thru 1N3211R
1N3211 (R)
200
1N3210 (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Silicon Standard
Recover
y
Diode
Conditions
300
pp g
RMS reverse voltage
V
RMS
35
70
V
DC blocking voltage
V
DC
50 100 V
Continuous forward current
I
F
15 15 A
Operating temperature
T
j
-65 to 175 -65 to 175 °C
Storage temperature
T
stg
-65 to 175 -65 to 175 °C
Parameter Symbol 1N3208 (R) 1N3209 (R) Unit
Diode forward voltage 1.5 1.5
10 10 μA
10 10 mA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
0.65 0.65 °C/W
10
A297
Reverse current
I
R
V
F
297
V
R
= 50 V, T
j
= 25 °C
I
F
= 15 A, T
j
= 25 °C
T
C
≤ 150 °C
Conditions
140
297 297
-65 to 175
15 15
-65 to 175
1N3211 (R)
10 10
1N3210 (R)
0.65
V
R
= 50 V, T
j
= 150 °C
0.65
1.5 1.5
10
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-65 to 175 -65 to 175
T
C
= 25 °C, t
p
= 8.3 ms
210
300200
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
www.genesicsemi.com
1
1N3208 thru 1N3211R
www.genesicsemi.com
2
P1-P2

1N3210

Mfr. #:
Buy 1N3210
Manufacturer:
GeneSiC Semiconductor
Description:
Rectifiers 200V 15A Std. Recovery
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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