74HC_HCT1G08_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 16 August 2012 6 of 12
NXP Semiconductors
74HC1G08-Q100; 74HCT1G08-Q100
2-input AND gate
[1] t
pd
is the same as t
PLH
and t
PHL
.
[2] C
PD
is used to determine the dynamic power dissipation P
D
(W).
P
D
=C
PD
V
CC
2
f
i
+ (C
L
V
CC
2
f
o
)where:
f
i
= input frequency in MHz
f
o
= output frequency in MHz
C
L
= output load capacitance in pF
V
CC
= supply voltage in Volts
(C
L
V
CC
2
f
o
) = sum of outputs
12. Waveforms
C
PD
power dissipation
capacitance
V
I
=GNDtoV
CC
1.5 V
[2]
-21- - -pF
Table 8. Dynamic characteristics
…continued
GND = 0 V; t
r
= t
f
6.0 ns; All typical values are measured at T
amb
=25
C. For test circuit see Figure 6
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max
For 74HC1G08-Q100: V
M
= 0.5 V
CC
; V
I
= GND to V
CC
For 74HCT1G08-Q100: V
M
= 1.3 V; V
I
= GND to 3.0 V
Test data is given in Table 8
. Definitions for test circuit:
C
L
= Load capacitance including jig and probe
capacitance
R
T
= Termination resistance should be equal to the
output impedance Z
o
of the pulse generator
Fig 5. The input (A and B) to output (Y) propagation
delays
Fig 6. Test circuit for measuring switching times
mna116
A, B input
Y output
t
PHL
t
PLH
V
M
V
M
mna101
V
CC
V
I
V
O
R
T
C
L
PULSE
GENERATOR
DUT