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STTH6112TV2

P1-P3P4-P6P7-P8
March 2006 Rev 1 1/8
8
STTH6112TV
Ultrafast recovery - 1200 V diode
Main product characteristics
Features and benefits
■ Ultrafast, soft recovery
■ Very low conduction and switching losses
■ High frequency and/or high pulsed current
operation
■ High reverse voltage capability
■ High junction temperature
■ Insulated package:
Electrical insulation = 2500 V
RMS
Capacitance < 45 pF
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
Order codes
I
F(AV)
2 x 30 A
V
RRM
1200 V
T
j
150° C
V
F
(typ) 1.30 V
t
rr
(typ) 45 ns
Part Number Marking
STTH6112TV1 STTH6112TV1
STTH6112TV2 STTH6112TV2
K2
K1
A2
A1
K2
K1
A2
A1
A1
A2
K1
K2
A1
A2
K1
K2
STTH6112TV2
STTH6112TV1
ISOTOP
www.st.com
Characteristics STTH6112TV
2/8
1 Characteristics
When the diodes are used simultaneously:
∆T
j(diode1)
= P
(diode1)
x R
th(j-c)
(per diode) + P
(diode2)
x R
th(c)
To evaluate the conduction losses use the following equation:
P = 1.60 x I
F(AV)
+ 0.012 I
F
2
(RMS)
Table 1. Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 1200 V
I
F(RMS)
RMS forward current 100 A
I
F(AV)
Average forward current, δ = 0.5 T
c
= 70° C per diode 30 A
I
FRM
Repetitive peak forward current t
p
= 5 µs, F = 5 kHz square 300 A
I
FSM
Surge non repetitive forward
current
t
p
= 10 ms Sinusoidal 250 A
T
stg
Storage temperature range -65 to + 150 °C
T
j
Maximum operating junction temperature 150 °C
Table 2. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode 1.16
°C/WTotal 0.63
R
th(c)
Coupling thermal resistance 0.1
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
20
µA
T
j
= 125° C 15 150
V
F
(2)
Forward voltage drop
T
j
= 25° C
I
F
= 25 A
2.10
V
T
j
= 125° C 1.25 1.90
T
j
= 150° C 1.20 1.80
T
j
= 25° C
I
F
= 30 A
2.25
T
j
= 125° C 1.35 2.05
T
j
= 150° C 1.30 1.95
1. Pulse test: t
p
= 5 ms, δ < 2 %
2. Pulse test: t
p
= 380 µs, δ < 2 %
STTH6112TV Characteristics
3/8
Table 4. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ Max. Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25° C
115
ns
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25° C
57 80
I
F
= 1 A, dI
F
/dt = -200 A/µs,
V
R
= 30 V, T
j
= 25° C
45 65
I
RM
Reverse recovery current
I
F
= 30 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125° C
25 35 A
S Softness factor
I
F
= 30 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125° C
1.5
t
fr
Forward recovery time
I
F
= 30 A dI
F
/dt = 100 A/µs
V
FR
= 1.5 x V
Fmax
, T
j
= 25° C
550 ns
V
FP
Forward recovery voltage
I
F
= 30 A, dI
F
/dt = 100 A/µs,
T
j
= 25° C
6V
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
P(W)
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25 30 35
I (A)
F(AV)
δ=0.05
δ=0.1
δ=0.2
δ=0.5
δ=1
T
δ
=tp/T
tp
I (A)
FM
0
20
40
60
80
100
120
140
160
180
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
T
j
= 25 °C
(Maximum values)
T
j
=150°C
(Maximum values)
T
j
=150°C
(Maximum values)
T
j
=150°C
(Typical values)
T
j
=150°C
(Typical values)
V (V)
FM
P1-P3P4-P6P7-P8

STTH6112TV2

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Buy STTH6112TV2
Manufacturer:
STMicroelectronics
Description:
Rectifiers high voltage diode
Lifecycle:
New from this manufacturer.
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