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IXDI404SI

P1-P3P4-P6P7-P9P10-P11
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOS
TM
processes
• Latch-Up Protected
• High Peak Output Current: 4A Peak
• Wide Operating Range: 4.5V to 35V
• High Capacitive Load
Drive Capability: 1800pF in <15ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
• Two Drivers in Single Chip
Applications
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Class D Switching Amplifiers
• Limiting di/dt Under Short Circuit
IXDN404 / IXDI404 / IXDF404
First Release
Copyright © IXYS CORPORATION 2004
General Description
The IXDN404/IXDI404/IXDF404 is comprised of two 4 Ampere
CMOS high speed MOSFET drivers. Each output can source
and sink 4A of peak current while producing voltage rise and
fall times of less than 15ns to drive the latest IXYS MOSFETs
and IGBT's. The input of the driver is compatible with TTL or
CMOS and is fully immune to latch up over the entire operating
range. A patent-pending circuit virtually eliminates CMOS
power supply cross conduction and current shoot-through.
Improved speed and drive capabilities are further enhanced by
very low, matched rise and fall times.
The IXDN404 is configured as a dual non-inverting gate driver,
the IXDI404 is a dual inverting gate driver, and the IXDF404 is a
dual inverting + non-inverting gate driver.
The IXDN404/IXDI404/IXDF404 family are available in the
standard 8 pin P-DIP (PI), SOIC-8 (SIA) and SOIC-16 (SIA-16)
packages. For enhanced thermal performance, the SOP-8 and
SOP-16 are also available in a package with an exposed
grounded metal back as the SI and SI-16 repectively.
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
Part Number Package Type Temp. Range Configuration
IXDN404PI 8-Pin PDIP
IXDN404SI 8-Pin SOIC with Grounded Metal Back
IXDN404SIA 8-Pin SOIC
IXDN404SI-16 16-Pin SOIC with Grounded Metal Back
IXDN404SIA-16 16-Pin SOIC
-55°C to
+125°C
Dual Non
Inverting
IXDI404PI 8-Pin PDIP
IXDI404SI 8-Pin SOIC with Grounded Metal Back
IXDI404SIA 8-Pin SOIC
IXDI404SI-16 16-Pin SOIC with Grounded Metal Back
IXDI404SIA-16 16-Pin SOIC
-55°C to
+125°C
Dual Inverting
IXDF404PI 8-Pin PDIP
IXDF404SI 8-Pin SOIC with Grounded Metal Back
IXDF404SIA 8-Pin SOIC
IXDF404SI-16 16-Pin SOIC with Grounded Metal Back
IXDF404SIA-16 16-Pin SOIC
-55°C to
+125°C
Inverting +
Non Inverting
Ordering Information
NOTE: Mounting or solder tabs on all packages are connected to ground
DS99018D(11/10)
2
IXDN404 / IXDI404 / IXDF404
Figure 2 - IXDI404 Dual Inverting 4A Gate Driver Functional Block Diagram
Figure 3 - IXDF404 Inverting + Non-Inverting 4A Gate Driver Functional Block Diagram
N
P
N
P
OUT A
Vcc
OUT B
GND
ANTI-CROSS
CONDUCTION
N
P
N
P
OUT A
Vcc
OUT B
IN A
IN B
GND
ANTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
* Patent Pending
N
P
N
P
OUT A
Vcc
OUT B
IN A
IN B
GND
ANTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
Figure 1 - IXDN404 Dual 4A Non-Inverting Gate Driver Functional Block Diagram
3
IXDN404 / IXDI404 / IXDF404
Unless otherwise noted, T
A
= 25
o
C, 4.5V ≤ V
CC
≤ 35V .
All voltage measurements with respect to GND. Device configured as described in Test Conditions. All specifications are for one channel.
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V
IH
High input voltage
4.5V
≤
V
CC
≤
18V
2.5 V
V
IL
Low input voltage
4.5V
≤
V
CC
≤
18V
0.8 V
V
IN
Input voltage range -5 V
CC
+ 0.3 V
I
IN
Input current
0V
≤
V
IN
≤
V
CC
-10 10
µ
A
V
OH
High output voltage V
CC
- 0.025
V
V
OL
Low output voltage 0.025 V
R
OH
Output resistance
@ Output High
V
CC
= 18V
2 2.5
Ω
R
OL
Output resistance
@ Output Low
V
CC
= 18V 1.5 2
Ω
I
PEAK
Peak output current V
CC
= 18V
4 A
I
DC
Continuous output
current
1 A
t
R
Rise time C
L
=1800pF Vcc=18V 16 18 ns
t
F
Fall time C
L
=1800pF Vcc=18V 13 17 ns
t
ONDLY
On-time propagation
delay
C
L
=1800pF Vcc=18V 36 40 ns
t
OFFDLY
Off-time propagation
delay
C
L
=1800pF Vcc=18V 35 39 ns
V
CC
Power supply voltage 4.5 18 35 V
I
CC
Power supply current V
IN
= 3.5V
V
IN
= 0V
V
IN
= + V
CC
1
0
3
10
10
mA
µ
A
µ
A
Absolute Maximum Ratings (Note 1)
Parameter
Value
Supply Voltage 40V
All Other Pins -0.3V to V
CC
+ 0.3V
Junction Temperature
150
o
C
Storage Temperature
-65
o
C to 150
o
C
Soldering Lead Temperature
(10 seconds maximum)
300
o
C
Operating Ratings
Specifications Subject To Change Without Notice
Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
Thermal Resistance (To Ambient)
8 Pin PDIP (PI) (θ
JA
) 120 K/W
8 Pin SOIC (SIA) 110 K/W
16 Pin SOIC (SIA-16) (θ
JA
) 110 K/W
θ
JA
with heat sink **
Heat sink area of 1 cm
2
8 Pin SOIC 95 K/W
16 Pin SOIC-CT 95 K/W
Heat sink area of 3 cm
2
8 Pin SOIC 85 K/W
16 Pin SOIC-CT 85 K/W
** Device soldered to metal back pane. Heat sink area is 1 oz.
copper on 1 side of 0.06" thick FR4 PC board.
Parameter Value
Operating Temperature Range
-55
o
C to 125
o
C
Thermal Resistance (Junction to Case) (θ
JC
)
8 Pin SOIC (SI)
16 Pin SOIC (SI-16)
10 K/W
10 K/W
P1-P3P4-P6P7-P9P10-P11

IXDI404SI

Mfr. #:
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Manufacturer:
Description:
IC MOSFET DRVR LS 4A DUAL 8-SOIC
Lifecycle:
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