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NL17VHC1G07DTT1

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2015
June, 2015 − Rev. 18
1 Publication Order Number:
MC74VHC1G07/D
MC74VHC1G07
Single Non-Inverting Buffer
with Open Drain Output
The MC74VHC1G07 is an advanced high speed CMOS buffer with
open drain output fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer and an open drain output which provides the capability to set the
output switching level. This allows the MC74VHC1G07 to be used to
interface any 2 V to 5.5 V circuit to circuits of any voltage between
1.5 V and 7 V using an external resistor and power supply.
The MC74VHC1G07 input structure provides protection when
voltages up to 7 V are applied, regardless of the supply voltage.
Features
• High Speed: t
PD
= 3.8 ns (Typ) at V
CC
= 5 V
• Low Internal Power Dissipation: I
CC
= 1 mA (Max) at T
A
= 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 105
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
V
CC
NC
IN A
OUT Y
GND
IN A
OUT Y
1
OVT
Figure 1. Pinout
Figure 2. Logic Symbol
1
2
3
4
5
FUNCTION TABLE
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
L
H
A Input Y Output
L
Z
PIN ASSIGNMENT
1
2
3 GND
NC
IN A
4
5V
CC
OUT Y
www.onsemi.com
MARKING
DIAGRAMS
V7 = Device Code
M = Date Code*
G = Pb−Free Package
SC−88A / SOT−353 / SC−70
DF SUFFIX
CASE 419A
TSOP−5 / SOT−23 / SC−59
DT SUFFIX
CASE 483
V7 M G
G
1
5
V7 M G
G
M
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
MC74VHC1G07
www.onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage 0.5 to 7.0 V
V
IN
DC Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage 0.5 to 7.0 V
I
IK
DC Input Diode Current 20 mA
I
OK
DC Output Diode Current V
OUT
GND; V
OUT
V
CC
20 mA
I
OUT
DC Output Sink Current, per Pin 25 mA
I
CC
DC Supply Current, V
CC
and GND Pin +50 mA
T
STG
Storage Temperature Range 65 to 150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias 150 °C
q
JA
Thermal Resistance SC70−5/SC−88A/SOT−353 (Note 1)
SOT23−5/TSOP−5/SC59−5
350
230
°C/W
P
D
Power Dissipation in Still Air at 85°CSC70−5/SC−88A/SOT−353
SOT23−5/TSOP−5/SC59−5
150
200
mW
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
2000
200
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5) 500 mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage 2.0 5.5 V
V
IN
DC Input Voltage 0.0 5.5 V
V
OUT
DC Output Voltage 0.0 7.0 V
T
A
Operating Temperature Range 55 125 °C
t
r
, t
f
Input Rise and Fall Time V
CC
= 3.3 V ± 0.3 V
V
CC
= 5.0 V ± 0.5 V
0
0
100
20
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
NORMALIZED FAILURE RATE
TIME, YEARS
T
J
= 130°C
T
J
= 120°C
T
J
= 110°C
T
J
= 100°C
T
J
= 90°C
T
J
= 80°C
MC74VHC1G07
www.onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions
V
CC
(V)
T
A
= 255C T
A
855C *555C T
A
1255C
Unit
Min Typ Max Min Max Min Max
V
IH
Minimum
High−Level
Input Voltage
2.0
3.0
4.5
5.5
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
V
V
IL
Maximum
Low−Level
Input Voltage
2.0
3.0
4.5
5.5
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
V
V
OL
Maximum
Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IL
I
OL
= 50 mA
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IL
I
OL
= 4 mA
I
OL
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
I
LKG
Z−State Output
Leakage Current
V
IN
= V
IH
V
OUT
= V
CC
or GND
5.5 0.25 2.5 5.0
mA
I
IN
Maximum Input
Leakage Current
V
IN
= 5.5 V or GND 0 to 5.5 0.1 1.0 1.0
mA
I
CC
Maximum
Quiescent Supply
Current
V
IN
= V
CC
or GND 5.5 1.0 20 40
mA
I
OFF
Power Off−Output
Leakage Current
V
OUT
= 5.5 V
V
IN
= 5.5 V
0 0.25 2.5 5
mA
AC ELECTRICAL CHARACTERISTICS Input t
r
= t
f
= 3.0 ns
T
A
= 255C T
A
855C *555C T
A
1255C
Symbol Parameter Test Conditions Min Typ Max Min Max Min Max Unit
t
PZL
Maximum Output
Enable Time,
Input A to Y
V
CC
= 3.3 0.3 V C
L
= 15 pF
R
L
= R
I
= 500 W C
L
= 50 pF
5.0
7.5
7.1
10.6
8.5
12.0
10.0
14.5
ns
V
CC
= 5.0 0.5 V C
L
= 15 pF
R
L
= R
I
= 500 W C
L
= 50 pF
3.8
5.3
5.5
7.5
6.5
8.5
8.0
10.0
t
PLZ
Maximum Output
Disable Time
V
CC
= 3.3 0.3 V C
L
= 50 pF
R
L
= R
I
= 500 W
7.5 10.6 12.0 14.5 ns
V
CC
= 5.0 0.5 V C
L
= 50 pF
R
L
= R
I
= 500 W
5.3 7.5 8.5 10.0
C
IN
Maximum Input
Capacitance
4 10 10 10 pF
Typical @ 25°C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (Note 6) 18 pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
P1-P3P4-P6

NL17VHC1G07DTT1

Mfr. #:
Buy NL17VHC1G07DTT1
Manufacturer:
ON Semiconductor
Description:
IC BUFFER NON-INVERT 5.5V 5TSOP
Lifecycle:
New from this manufacturer.
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