DMN3033LSN-7 Datasheet DMN3033LSN-7 | P1-P3

DMN3033LSN

Document number: DS31116 Rev. 7 - 2

1 of 5

www.diodes.com

July 2016

DMN3033LSN

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low Gate Charge

• Low R

DS(ON)

:

• 30mΩ @V

GS

= 10V

• 40mΩ @V

GS

= 4.5V

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SC59

• Case Material - Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.014 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN3033LSN-7

SC59

3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

.

Marking Information

Date Code Key

Year

2007

~

2016

2017

2018

2019

2020

2021

2022

Code

U

~

D

E

F

G

H

I

J

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

SC59

Top View

Equivalent Circuit

Source

Gate

Drain

D

G

S

Pin Configuration

e3

A5 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex:

D = 2016)

M = Month (ex: 9 = September)

A5

YM

DMN3033LSN

Document number: DS31116 Rev. 7 - 2

2 of 5

www.diodes.com

July 2016

DMN3033LSN

Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

30

V

Gate-Source Voltage

V

GSS

±20

V

Continuous Drain Current (Note 5) T

A

= +25°C

T

A

= +70°C

I

D

6

5

A

Pulsed Drain Current (Note 6)

I

DM

24

A

Body-Diode Continuous Current (Note 5)

I

S

2.25

A

Thermal Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

P

D

1.4

W

Thermal Resistance, Junction to Ambient (Note 5) t ≤10s

R

θ

JA

90

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

STATIC PARAMETERS

Drain-Source Breakdown Voltage

BV

DSS

30



V

I

D

= 250µA, V

GS

= 0V

Zero Gate Voltage Drain Current T

J

= +25°C

T

J

= +55°C

I

DSS

 

1

5

µA

V

DS

= 30V, V

GS

= 0V

Gate-Body Leakage Current

I

GSS



±100

nA

V

DS

= 0V, V

GS

= ±20V

Gate Threshold Voltage

V

GS(TH)

1.0



2.1

V

DS

= V

GS

, I

D

= 250µA

Static Drain-Source On-Resistance (Note 7)

R

DS(ON)



25

36

30

40

mΩ

V

GS

= 10V, I

D

= 6A

V

GS

= 4.5V, I

D

= 5A

Forward Transconductance (Note 7)

g

FS



5



S

V

DS

= 10V, I

D

= 8A

Diode Forward Voltage (Note 7)

V

SD



0.7

1.1

V

I

S

= 2.25A, V

GS

= 0V

DYNAMIC PARAMETERS (Note 8)

Total Gate Charge

Q

g



10.5



nC

V

GS

= 5V, V

DS

= 15V, I

D

= 6A

Gate-Source Charge

Q

gs



3.8



nC

V

GS

= 10V, V

DS

= 15V, I

D

= 6A

Gate-Drain Charge

Q

gd



2.9



nC

V

GS

= 10V, V

DS

= 15V, I

D

= 6A

Turn-On Delay Time

t

D(ON)



11



ns

V

DD

= 15V, V

GS

= 10V,

R

D

= 1.8Ω, R

G

= 6Ω

Turn-On Rise Time

t

R



7



ns

Turn-Off Delay Time

t

D(OFF)



63



ns

Turn-Off Fall Time

t

F



30



ns

Input Capacitance

C

iss



755



pF

V

DS

= 10V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss



136



pF

Reverse Transfer Capacitance

C

rss



108



pF

Notes: 5. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.

6. Repetitive Rating, pulse width limited by junction temperature.

7. Test pulse width t = 300ms.

8. Guaranteed by design. Not subject to production testing.

DMN3033LSN

Document number: DS31116 Rev. 7 - 2

3 of 5

www.diodes.com

July 2016

DMN3033LSN

0

2

4

6

8

10

12

14

16

18

20

0 1 2 3 4

V = 5V

Pulsed

DS

0.01

0.02

0.03

0.04

0.05

0.06

0 2 4 6 8 10 12 14 16 18 20

V = 4.5V

GS

V = 10V

GS

I , DRAIN CURRENT (A)

Fig. 3

D

On-Resistance vs. Drain Current and Gate Voltage

R , STATIC DRAIN-SOURCE ON-RESISTANCE ( )

DS(on)

Ω

Fig. 4 Typical Total Capacitance

0

200

400

600

800

1,000

1,200

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

C , CAPACITANCE (pF)

T

C

iss

C

oss

C

rss

f = 1 MHz

V = 0V

GS

0

0.5

1

1.5

2

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (C)

A

R , STATIC DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

Fig. 6 Normalized Static Drain-Source On-Resistance

vs. Ambient Temperature

V = 10V

I = 6A

GS

D

V = 4.5V

I = 5A

GS

D

(

o

C)

DMN3033LSN-7

DMN3033LSN-7

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