TS51111
Final Datasheet Rev 2.2
April 17, 2015
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Proprietary & Condential
Absolute Maximum Rating
Over operating free–air temperature range unless otherwise noted
(1, 2, 3)
Parameter Value Unit
VAC1, VAC2, PDC, MOD1, MOD2, OVP -0.3 to 22 V
BST1, BST2 -0.3 to (VAC + 5.5) V
VCORE, TX, RX, UART, PACKP, SCL, SDA, VAC_DET, VREF,
AMUX, VCORE, USB
-0.3 to 5.5 V
Operating Junction Temperature Range, TJ -40 to 125 °C
Storage Temperature Range, TSTG -65 to 150 °C
Electrostatic Discharge – Human Body Model ±2k V
Electrostatic Discharge – Machine Model +/-200 V
Lead Temperature (soldering, 10 seconds) 260 °C
Notes:
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating con-
ditions” is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(3) ESD testing is performed according to the respective JESD22 JEDEC standard.
Recommended Operating Conditions
Symbol Parameter Min Typ Max Unit
VAC
PP
Input Operating Voltage 20 V
F
VAC
Input Operating Frequency 100 210 kHz
PACKP Battery input when externally driven 2.5 5.5 V
L
IN
Inductor (measured on charging mat) 14* uH
C
R
Parallel resonant capacitor 1.8* nF
C
S
Series resonant capacitor 183* nF
C
O
Modulation capacitors 22 nF
C
OUT
Output capacitor 0.8 1 uF
C
CORE
LDO decoupling capacitor 8 10 uF
C
B1
, C
B2
Rectier boost capacitors 200 220 240 nF
C
IN
Synchronous rectier / PDC decoupling capacitor 10 20 uF
C
AMUX
Analog mux decoupling capacitor 1 2 nF
C
REF
VREF decoupling capacitor 80 100 120 nF
T
A
Operating Free Air Temperature -40 85 °C
T
J
Operating Junction Temperature -40 125 °C
Exact values of the resonant capacitors and inductor will depend on the speciÀc system conÀguration.
TS51111
Final Datasheet Rev 2.2
April 17, 2015
www.semtech.com
8 of 22
Semtech
Proprietary & Condential
Thermal Characteristics
Symbol Parameter Value Units
θ
JA
36QFN Thermal Resistance Junction to Air (Note 1) 32 °C/W
Note 1: Assumes 3.917 x 3.917 in2 area of 1 oz copper, 4 layer PCB, 4 thermal vias under PAD, and 25°C ambient temperature.
Characteristics
Electrical Characteristics, T
J
= -40C to 85C, PDC = PACKP = 4.2V (unless otherwise noted)
Symbol Parameter Condition Min Typ Max Unit
I
Q
I
Q,Standby,LPM
Quiescent Current in Low Power Mode
Current from PACKP, ILDO = 0, EN_
VREF = EN_SW = EN_PRE = 0
20 30 uA
I
Q,Disable
Quiescent Current in Disable (Direct
Charge, Low Power Mode disabled)
Current from PACKP, ILDO = 0, EN_
VREF = EN_SW = EN_PRE = 0
2uA
UVLO
V
UVLO-PACK_P
PACKP UVLO PACKP Rising 2.1 V
HYST
UVLO-PACK_P
PACKP UVLO Hysteresis 400 mV
PDC-PACKP Pass Device
T
SW-ON
Delay from EN_SW to switch ON 200 us
T
SW-OFF
Delay from EN_SW to switch OFF 100 ns
I
PRECHARGE
Precharge Current
Relative to set point
T = 25C; PDC = 3.5V; PACKP = 2.7V
I
NOM
-20%
I
NOM
I
NOM
+20%
TC
PRECHARGE
Precharge Current Temperature
Coecient
25C to 85C -0.3 %/C
I
LIMIT
Current Limit At 3.2 A setting 2.2 3.2 A
UART
T
RX
Delay from UART to RX 0.7 us
T
TX
Delay from TX to UART 0.6 us
V
T,UAR T
UART threshold 0.8 V
V
T,TX
TX threshold 0.8 V
R
dson,RX
RX Switch Resistance 10 Ω
SDA / SCl / EN_MOD Digital Inputs
V
IH
VCORE = 1.5V Voltage Rising 0.875 V
V
IL
VCORE = 1.5V Voltage Falling 0.465 V
V
IH
VCORE = 1.8V Voltage Rising 1.01 V
V
IL
VCORE = 1.8V Voltage Falling 0.525 V
V
IH
VCORE = 2.5V Voltage Rising 1.25 V
V
IL
VCORE = 2.5V Voltage Falling 0.665 V
V
IH
VCORE = 3.3V Voltage Rising 1.47 V
V
IL
VCORE = 3.3V Voltage Falling 0.825 V
R
IN
Pin input impedance Resistance to GND 1M Ω
TS51111
Final Datasheet Rev 2.2
April 17, 2015
www.semtech.com
9 of 22
Semtech
Proprietary & Condential
Electrical Characteristics, T
J
= -40C to 85C, PDC = PACKP = 4.2V (unless otherwise noted)
Symbol Parameter Condition Min Typ Max Unit
VAC Detect
V
OH
Output high voltage
Totem-pole conguration only.
100uA load.
VCORE-
100mV
V
V
OL
Output low voltage
Totem-pole or open-drain
congurations. 100uA load.
100 mV
I
OFF
Output leakage
Output leakage in open-drain
o-state.
0.1 uA
R
dson,VAC_DETECT
Switch Resistance
Output resistance to GND in
open-drain on-state.
10 Ω
VREF
CVREF VREF decoupling capacitor 80 100 120 nF
VVREF VREF voltage T = 0 to 85 C, IOUT 0mA to 2mA 1.988 2.0 2.012 V
RPDC-DIV PDC_DIV ratio
T = 0 to 85 C, PDC_DIV_SEL = 0 0.048 0.05 0.052 V/V
T = 0 to 85 C, PDC_DIV_SEL = 1 0.198 0.2 0.202 V/V
RPACKP-DIV PACKP_DIV ratio T = 0 to 85 C 0.198 0.2 0.202 V/V
RUSB-DIV USB_DIV ratio T = 0 to 85 C 0.198 0.2 0.202 V/V
RTHERM-DIV THERM_DIV ratio T = 0 to 85 C 0.495 0.5 0.505 V/V
IQ,VREF VREF quiescent current PACKP current if VREF enabled 300 uA
TEN-VREF VREF enable time
Delay from EN_VREF to VREF
available
3.2 us
MOD
T
MOD-ON
EN_MOD to switches
ON delay
3us
T
MOD-OFF
EN_MOD to switches
OFF delay
0.7 us
I
Q,MOD
MOD block quiescent current
Current from PACKP when MOD
switches closed. EN_MOD hi. EN_
VREF = EN_SE = EN_PRE = lo
100 uA
R
dson,MOD
MOD Switch Resistance MOD1 to MOD2 3 Ω
Low Power LDO
VCORE
NOM
VCORE voltage PACKP = 4.2V 3.3 V
V
Dropout
Dropout voltage PACKP = 2.3V, IVCORE=1mA 100 mV
I
out
Output current PACKP=4.2V, VCORE = 0.9*VCORE
NOM
10 50 mA
C
CORE
LDO Decoupling Capacitor 0.8 1 1.2 uF
OVP
VOVP OVP Threshold 21 V
Rdson,OVP OVP Switch Resistance 2 Ω

TS51111-M22WCSR

Mfr. #:
Manufacturer:
Semtech
Description:
Wireless Charging ICs WirelessPWR Receiver Direct Charging IC
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