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SI8802DB-T2-E1

P1-P3P4-P6P7-P8
Vishay Siliconix
Si8802DB
New Product
Document Number: 67999
S12-1620-Rev. B, 09-Jul-12
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
N-Channel 8 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Power MOSFET
• Small 0.8 mm x 0.8 mm Outline Area
• Low 0.4 mm max. profile
• Low On-Resistance
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switch with Low Voltage Drop
• Load Switch for 1.2 V, 1.5 V, 1.8 V
Power Lines
• Smart Phones, Tablet PCs, Portable
Media Players
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(A)
a
Q
g
(Typ.)
8
0.054 at V
GS
= 4.5 V 3.5
4.3 nC
0.060 at V
GS
= 2.5 V 3.3
0.068 at V
GS
= 1.8 V 3.1
0.086 at V
GS
= 1.5 V 2.3
0.135 at V
GS
= 1.2 V 1
MICRO FOOT
Device Marking: xxx = Date/Lot Traceability Code
AB
Ordering Information:
Si8802DB-T2-E1 (Lead (Pb)-free and Halogen-free)
Bump Side View Backside View
S
D
G
S
12
43
AB
xxx
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
8
V
Gate-Source Voltage V
GS
± 5
Continuous Drain Current (T
J
= 150 °C)
T
A
= 25 °C
I
D
3.5
a
A
T
A
= 70 °C 2.8
a
T
A
= 25 °C 3
b
T
A
= 70 °C 2.4
b
Pulsed Drain Current (t = 300 µs)
I
DM
15
Continuous Source-Drain Diode Current
T
A
= 25 °C
I
S
0.7
a
T
A
= 25 °C 0.4
b
Maximum Power Dissipation
T
A
= 25 °C
P
D
0.9
a
W
T
A
= 70 °C 0.6
a
T
A
= 25 °C 0.5
b
T
A
= 70 °C 0.3
b
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, d
t 5 s R
thJA
105 135
°C/W
Maximum Junction-to-Ambient
b, e
200 260
www.vishay.com
2
Document Number: 67999
S12-1620-Rev. B, 09-Jul-12
Vishay Siliconix
Si8802DB
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
8V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 µA
7
mV/°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
- 2.1
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.35 0.7 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 5 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 8 V, V
GS
= 0 V
1
µA
V
DS
= 8 V, V
GS
= 0 V, T
J
= 55 °C
10
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 4.5 V
10 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
4.5 V, I
D
= 1 A
0.044 0.054
V
GS
2.5 V, I
D
= 1 A
0.049 0.060
V
GS
1.8 V, I
D
= 0.5 A
0.055 0.068
V
GS
1.5 V, I
D
= 0.2 A
0.060 0.086
V
GS
1.2 V, I
D
= 0.1 A
0.080 0.135
Forward Transconductance
a
g
fs
V
DS
= 4 V, I
D
= 1 A
13 S
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 4 V, V
GS
= 4.5 V, I
D
= 1 A
4.3 6.5
nCGate-Source Charge
Q
gs
0.44
Gate-Drain Charge
Q
gd
0.72
Gate Resistance
R
g
f = 1 MHz 3.5
Turn - O n De l ay T i m e
t
d(on)
V
DD
= 4 V, R
L
= 4
I
D
1 A, V
GEN
= 4.5 V, R
g
= 1
510
ns
Rise Time
t
r
15 30
Turn-Off Delay Time
t
d(off)
22 40
Fall Time
t
f
715
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
A
= 25 °C
0.7
A
Pulse Diode Forward Current
I
SM
15
Body Diode Voltage
V
SD
I
S
= 1 A, V
GS
= 0 V
0.7 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= 1 A, dI/dt = 100 A/µs, T
J
= 25 °C
20 40 ns
Body Diode Reverse Recovery Charge
Q
rr
510nC
Reverse Recovery Fall Time
t
a
14
ns
Reverse Recovery Rise Time
t
b
60
Document Number: 67999
S12-1620-Rev. B, 09-Jul-12
www.vishay.com
3
Vishay Siliconix
Si8802DB
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
3
6
9
12
15
0 0.5 1 1.5 2 2.5 3
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 1.5 V
V
GS
= 5 V thru 2 V
V
GS
= 1 V
0
0.04
0.08
0.12
0.16
0 3 6 9 12 15
R
DS(on)
- On-Resistance (Ω)
I
D
-Drain Current (A)
V
GS
= 1.5 V
V
GS
= 1.2 V
V
GS
= 4.5 V
V
GS
= 1.8 V
V
GS
= 2.5 V
0
1
2
3
4
5
0 1 2 3 4 5
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 6.4 V
V
DS
= 2 V
V
DS
= 4 V
I
D
= 1 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
0.0 0.3 0.6 0.9 1.2 1.5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
100
200
300
400
500
600
0 2 4 6 8
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
0.6
0.8
1.0
1.2
1.4
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 1.5 V, I
D
= 0.2 A
V
GS
= 4.5 V, 2.5 V, 1.8 V; I
D
= 1 A
V
GS
= 1.2 V, I
D
= 0.1 A
P1-P3P4-P6P7-P8

SI8802DB-T2-E1

Mfr. #:
Buy SI8802DB-T2-E1
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
Lifecycle:
New from this manufacturer.
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