NTP75N03L09G

NTP75N03L09, NTB75N03L09
http://onsemi.com
4
V
GS
= 4 V
1.6
1.4
1
1.2
0.8
0.6
1
100
1000
120
90
135
75
105
0
150
0.006
0
90
2.6
60
0.40.2
I
D
, DRAIN CURRENT (AMPS)
30
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
10
0.0085
0.008
0.0075
0.007
504030
0.0065
0.006
0.0055
0.005
0.004
20 60 70 120
Figure 3. On−Resistance vs. Drain Current and
Temperature
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO SOURCE RESISTANCE (
W
)
Figure 5. On−Resistance Variation Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current vs.
Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO SOURCE RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
120
−50 50250−25 75 125 150
0.5 2.5 321.5 3.514
0806040 10020 12
0
0.007
0.005
0.004
0.008
0.009
5 15202510 30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
60
45
30
15
0.0045
80 90 100
10
100
V
GS
= 10 V
V
GS
= 8 V
V
GS
= 6 V
V
GS
= 5 V
V
GS
= 4.5 V
V
GS
= 3 V
V
GS
= 2.5 V
T
J
= 25°C
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
DS
10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
GS
= 5 V
V
GS
= 5 V
T
J
= 25°C
V
GS
= 10 V
V
GS
= 0 V
V
GS
= 5.0 V
I
D
= 37.5 A
T
J
= 125°C
T
J
= 100°C
V
GS
= 3.5 V
NTP75N03L09, NTB75N03L09
http://onsemi.com
5
1600
1000
600
800
400
200
0
20
10
10000
25
6000
68
C, CAPACITANCE (pF)
2000
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1
1000
9.16.24.7
100
10
2.2 10 20
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (°C)
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
12000
25 7550 100 125 150
0.0 0.80.60.40.2 1.
0
10
25
5
15
0
30
75
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
0
4000
8000
4 2 0 2 4 6 8 10121416182022
40
45
50
55
60
65
70
35
1400
1200
V
DS
= 0 V
V
GS
= 0 V
T
J
= 25°C
C
rss
C
oss
C
iss
V
DD
= 15 V
V
GS
= 5 V
t
r
t
d(off)
t
d(on)
t
f
V
GS
= 0 V
T
J
= 25°C
I
D
= 75 A
T
J
= 25°C
I
D
= 75 A
V
GS
V
DS
Q
g
, TOTAL GATE CHARGE (nC)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
0102030405060
0
0
2
4
6
8
10
1
0
2
0
3
0
I
D
= 75 A
T
J
= 25°C
V
GS
Q
2
Q
1
Q
T
Q
3
V
DS
NTP75N03L09, NTB75N03L09
http://onsemi.com
6
PACKAGE DIMENSIONS
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
TO−220
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 −−− 1.15 −−−
Z −−− 0.080 −−− 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J

NTP75N03L09G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 75A TO220AB
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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