0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
P (W)
360
O
= 180
o
= 120
o
=90
o
=60
o
=30
o
DC
I (A)
T(AV)
Fig.1 : Maximum average power dissipation ver-
sus averageon-state current.
0 10 20 30 40 50 60 70 80 90 100 110 120 130
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I (A)
T(AV)
= 180
o
DC
Tlead ( C)
o
Fig.3 : Average on-state current versus lead tem-
perature.
Igt
Ih
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-40 -20 0 20 40 60 80 100 120 140
Igt[Tj]
Igt[Tj=25 C]
o
Ih[Tj]
Ih[Tj=25 C]
o
Tj( C)
o
Fig.5: Relative variationof gatetrigger current and
holding current versus junction temperature.
0 20 40 60 80 100 120 140
0.0
0.2
0.4
0.6
0.8
1.0
1.2 -50
-70
-90
-110
P (W) Tlead ( C)
o
Tamb ( C)
o
Rth(j-l)
Rth(j-a)
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tlead).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00
Zth(j-a)/Rth(j-a)
tp(s)
Fig.4 : Relative variation of thermal impedance
junctionto ambient versuspulse duration.
1 10 100 1000
0
5
10
15
20
25
Tj initial = 25 C
o
Number of cycles
I (A)
TSM
Fig.6 : Non repetitive surge peak on-state current
versusnumber of cycles.
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