BYC5B-600,118

IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
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Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved
If you have any questions related to this document, please contact our nearest sales office via e-
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Thank you for your cooperation and understanding,
WeEn Semiconductors
DDATA SHEET
Product specification March 2001
DISCRETE SEMICONDUCTORS
BYC5B-600
Rectifier diode
ultrafast, low switching loss
1;3 Semiconductors Product specification
Rectifier diode BYC5B-600
ultrafast, low switching loss
FEATURES SYMBOL QUICK REFERENCE DATA
• Extremely fast switching V
R
= 600 V
• Low reverse recovery current
• Low thermal resistance V
F
1.75 V
• Reduces switching losses in
associated MOSFET I
F(AV)
= 5 A
t
rr
= 19 ns (typ)
APPLICATIONS PINNING SOT404
• Active power factor correction PIN DESCRIPTION
• Half-bridge lighting ballasts
• Half-bridge/ full-bridge switched 1 no connection
mode power supplies.
2 cathode
1
The BYC5B-600 is supplied in the
SOT404 surface mounting 3 anode
package.
tab cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
Peak repetitive reverse voltage - 600 V
V
RWM
Crest working reverse voltage - 600 V
V
R
Continuous reverse voltage T
mb
110 ˚C - 500 V
I
F(AV)
Average forward current δ = 0.5; with reapplied V
RRM(max)
;-5A
T
mb
89 ˚C
I
FRM
Repetitive peak forward current δ = 0.5; with reapplied V
RRM(max)
; - 10 A
T
mb
89 ˚C
I
FSM
Non-repetitive peak forward t = 10 ms - 40 A
current. t = 8.3 ms - 44 A
sinusoidal; T
j
= 150˚C prior to surge
with reapplied V
RWM(max)
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction to - - 2.5 K/W
mounting base
R
th j-a
Thermal resistance junction to minimum footprint, FR4 board - 50 - K/W
ambient
k a
tab 3
13
tab
2
1 it is not possible to make connection to pin 2 of the SOT404 package
March 2001 1 Rev 1.400

BYC5B-600,118

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers TAPE13 PWRDIODE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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