Characteristics STTH61W04S
2/7 Doc ID 023613 Rev 1
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.85 x I
F(AV)
+ 0.005 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 400 V
I
F(RMS)
Forward rms current 90 A
I
F(AV)
Average forward current, = 0.5 T
c
= 110°C Per diode 60 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 500 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature + 175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Total
0.7 °C / W
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: tp = 5 ms, < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
20
µA
T
j
= 125 °C 20 200
V
F
(2)
2. Pulse test: tp = 380 µs, < 2%
Forward voltage drop
T
j
= 25 °C
I
F
= 60 A
1.35
T
j
= 150 °C 0.93 1.15
Table 5. Dynamic electrical characteristics
Symb
ol
Parameter Test conditions Min. Typ. Max. Unit
I
RM
Reverse recovery current
T
j
= 125 °C
I
F
= 60 A, V
R
= 320 V
dI
F
/dt = -200 A/µs
19 26 A
Q
RR
Reverse recovery charge 1400 nC
S
factor
Softness factor 0.3
t
rr
Reverse recovery time T
j
= 25 °C
I
F
= 1 A, V
R
= 30 V
dI
F
/dt = -100 A/µs
40 55 ns
t
fr
Forward recovery time T
j
= 25 °C I
F
= 60 A,
V
FR
= 1.2 V
dI
F
/dt = 400 A/µs
250 ns
V
FP
Forward recovery voltage T
j
= 25 °C 2 3 V