2004 Aug 06 4
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
PDTC115E series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PDTC115EE − plastic surface mounted package; 3 leads SOT416
PDTC115EEF − plastic surface mounted package; 3 leads SOT490
PDTC115EK − plastic surface mounted package; 3 leads SOT346
PDTC115EM − leadless ultra small plastic package; 3 solder lands; body
1.0
× 0.6 × 0.5 mm
SOT883
PDTC115ES − plastic single-ended leaded (through hole) package; 3 leads SOT54
PDTC115ET − plastic surface mounted package; 3 leads SOT23
PDTC115EU − plastic surface mounted package; 3 leads SOT323
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 50 V
V
CEO
collector-emitter voltage open base − 50 V
V
EBO
emitter-base voltage open collector − 10 V
V
I
input voltage
positive − +40 V
negative − −10 V
I
O
output current (DC) − 20 mA
I
CM
peak collector current − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
SOT54 note 1 − 500 mW
SOT23 note 1 − 250 mW
SOT346 note 1 − 250 mW
SOT323 note 1 − 200 mW
SOT416 note 1 − 150 mW
SOT883 notes 2 and 3 − 250 mW
SOT490 notes 1 and 2 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient
temperature
−65 +150 °C
