© 2011 IXYS All rights reserved
1 - 2
20110923a
CS 20-22moF1
IXYS reserves the right to change limits, test conditions and dimensions.
V
DRM
= V
RRM
= 2200 V
I
T(AV)
= 18 A
I
TSM
= 200 A
High Voltage Phase Control Thyristor
in High Voltage ISOPLUS i4-PAC™
Features
• high voltage thyristor
- for line frequency
- chip technology for long term stability
• ISOPLUS i4-PAC™
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
• controlled rectifiers
- power supplies
- drives
• AC switches
• capacitor discharge control
- flash tubes
- X-ray and laser generators
Thyristor
Symbol Conditions Maximum Ratings
V
DRM / RRM
2200 V
I
T(AV)
I
T(AV)
sine 180°; T
C
= 90°C
square; d =
1
/
3
; T
C
= 90°C
18
16
A
A
I
TSM
sine 180°; t = 10 ms; V
R
= 0 V; T
VJ
= 25°C
200
A
(di/dt)
cr
T
VJ
= T
VJM
f = 50 Hz; t
p
= 200 µs
repetitive, I
T
= 40 A 100 A/µs
V
D
=
2
/
3
V
DRM
I
G
= 0.45 A
di
G
/dt = 0.45 A/µs
non repetitive, I
T
= 20 A 250 A/µs
(dv/dt)
cr
T
VJ
= T
VJM
; V
D
=
2
/
3
V
DRM
R
GK
= ∞; method 1 (linear voltage rise)
2500 V/µs
V
RSM
V
DSM
V
V
RRM
V
DRM
V
Type
2300 2200 CS 20-22moF1
5
2
1
1
5
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
typ. max.
V
T
I
T
= 20 A; T
VJ
= 25°C
T
VJ
= 125°C
1.3
1.3
1.5 V
V
GT
I
GT
V
D
= 6 V 2.3
250
V
mA
V
GD
I
GD
V
D
=
2
/
3
V
DRM
; T
VJ
= T
VJM
0.2
5
V
mA
I
L
t
p
= 10 µs; V
D
= 6 V
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
500 mA
I
H
V
D
= 6 V; R
GK
= ∞ 150 mA
t
gd
V
D
= ½ V
DRM
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
2 µs
I
R
, I
D
V
R
= V
RRM
; V
D
= V
DRM
; T
VJ
= 25°C
T
VJ
= 125°C 2
50 µA
mA
R
thJC
DC current 0.92 K/W
