4
MGA-62563 Electrical Speci cations
T
C
= 25°C, Z
O
= 50, V
d
= 3V (unless otherwise speci ed)
Symbol Parameters and Test Conditions Freq Units Min. Typ. Max. Std Dev
Id
[1,2]
Device Current mA 47 62 77 2.09
NF
test
[1,2]
Noise Figure in test circuit
[1]
f = 0.5 GHz dB 0.93 1.4 0.06
G
test
[1,2]
Associated Gain in test circuit
[1]
f = 0.5 GHz dB 20.4 22 23.4 0.36
OIP3
test
[1,2]
Ouput 3
rd
Order Intercept in test circuit
[1]
f = 0.5 GHz dBm 30 32.9 0.51
NF
50ý
[3]
Noise Figure in 50 system f = 0.1 GHz dB 1.1
f = 0.2 GHz 1.0
f = 0.5 GHz 0.8
f = 1.0 GHz 0.9 0.06
f = 1.5 GHz 1.0
f = 2.0 GHz 1.2
f = 2.5 GHz 1.3
f = 3.0 GHz 1.5
|S
21
|
2
50ý
[3]
Associated Gain in 50 system f = 0.1 GHz dB 23.5
f = 0.2 GHz 23
f = 0.5 GHz 22
f = 1.0 GHz 20 0.36
f = 1.5 GHz 17
f = 2.0 GHz 15.5
f = 2.5 GHz 14
f = 3.0 GHz 13
OIP3
50ý
[3]
Output 3
rd
Order Intercept Point in 50 system f = 0.1 GHz dBm 34.7
f = 0.2 GHz 34.7
f = 0.5 GHz 34.8
f = 1.0 GHz 33.5 0.51
f = 1.5 GHz 33
f = 2.0 GHz 32.3
f = 2.5 GHz 32
f = 3.0 GHz 31
P1dB
50ý
[3]
Output Power at 1dB Gain Compression in 50 system f = 0.1 GHz dBm 18
f = 0.2 GHz 18
f =0.5 GHz 18
f = 1.0 GHz 17.6
f = 1.5 GHz 17.6
f = 2.0 GHz 17.7
f = 2.5 GHz 17.9
f = 3.0 GHz 17.7
Notes:
1. Guaranteed speci cations are 100% tested in the production test circuit as shown in Figure 1, the typical value is based on measurement of at
least 500 parts from three non-consecutive wafer lots during initial characterization of this product.
2. Circuit achieved a trade-o between optimal NF, Gain, OIP3 and input return loss.
3. Parameter quoted at 50 is based on measurement of selected typical parts tested on a 50 input and output test xture.
