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DMC2004LPK-7

P1-P3P4-P6P7-P8
DMC2004LPK
Document number: DS30854 Rev. 7 - 2
1 of 8
www.diodes.com
February 2013
© Diodes Incorporated
DMC2004LPK
NEW PRODUCT
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Low Gate Threshold Voltage V
GS(th)
< 1V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Complementary Pair MOSFET
• Ultra-Small Surface Mount Package
• ESD Protected Gate
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X1-DFN1612-6
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish – NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 6
• Ordering Information: See Page 6
• Weight: 0.003 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMC2004LPK-7 X1-DFN1612-6 3000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
X1-DFN1612-6
TOP VIEW
Internal Schematic
ESD protected
S
1
S
2
G
1
G
2
Q
1
Q
2
D
2
D
1
12 3
456
C1 = Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
C1
YM
Green
e4
DMC2004LPK
Document number: DS30854 Rev. 7 - 2
2 of 8
www.diodes.com
February 2013
© Diodes Incorporated
DMC2004LPK
NEW PRODUCT
Maximum Ratings N-CHANNEL – Q
1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±8
V
Drain Current (Note 5)
T
A
= +25°C
T
A
= +85°C
I
D
750
540
mA
Maximum Ratings P-CHANNEL – Q
2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8
V
Drain Current (Note 5)
T
A
= +25°C
T
A
= +85°C
I
D
-600
-430
mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
500 mW
Thermal Resistance, Junction to Ambient
R
θJA
250
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics N-CHANNEL – Q
1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
20
—
— V
V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current
I
DSS
— —
1 µA
V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
± 1
µA
V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
0.5 — 1.0 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS (ON)
—
—
—
0.4
0.5
0.7
0.55
0.70
0.90
Ω
V
GS
= 4.5V, I
D
= 540mA
V
GS
= 2.5V, I
D
= 500mA
V
GS
= 1.8V, I
D
= 350mA
Forward Transfer Admittance
|Y
fs
|
200
—
— mS
V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage (Note 6)
V
SD
0.5
—
1.2 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— —
150 pF
V
DS
= 16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
— —
25 pF
Reverse Transfer Capacitance
C
rss
— —
20 pF
Electrical Characteristics P-CHANNEL – Q
2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-20
—
— V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
— —
-1.0 µA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
± 1.0
µA
V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS
(
th
)
-0.5 — -1.0 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS (ON)
—
0.7
1.1
1.7
0.9
1.4
2.0
Ω
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
Forward Transfer Admittance
|Y
fs
|
200
— —
mS
V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage (Note 5)
V
SD
-0.5 — -1.2 V
V
GS
= 0V, I
S
= -115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— —
175 pF
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
— —
30 pF
Reverse Transfer Capacitance
C
rss
— —
20 pF
Notes: 5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.
DMC2004LPK
Document number: DS30854 Rev. 7 - 2
3 of 8
www.diodes.com
February 2013
© Diodes Incorporated
DMC2004LPK
NEW PRODUCT
Q
1
, N-CHANNEL
0
0
V , DRAIN SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
I , DRAIN CURRENT (A)
D
V , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
T , AMBIENT TEMPERATURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
I , DRAIN CURRENT (A)
D
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
I , DRAIN CURRENT (A)
D
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
I , DRAIN-SOURCE CURRENT (A)
Fig. 6 Static Drain-Source On-Resistance vs.
Drain-Source Current vs. Gate Source Voltage
D
10
P1-P3P4-P6P7-P8

DMC2004LPK-7

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Manufacturer:
Diodes Incorporated
Description:
MOSFET Complementary
Lifecycle:
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