FMY5T148 Datasheet FMY5T148 | P1-P3

FMY5

Transistor

Rev.B 1/4

General purpose(dual transistors)

FMY5

zFeatures

1) Both the 2SA1514K and 2SC3906K chips in an SMT

package.

2) PNP and NPN chips are connecter in a common

emitter.

zCircuit diagram

(2)

(3) (4) (5)

Tr

1

Tr

2

(1)

zExternal dimensions (Unit : mm)

Each lead has same dimensions

SMT5

1.1

0.8

0.3Min.

0.15

1.6

2.8

2.9

0.95

1.9

(

4

)

(

5

)

(

1

)

0.3

(

3

)

0.95

(

2

)

zAbsolute maximum ratings (Ta=25°C)

V

CBO

V

CEO

V

EBO

I

C

P

C

Tj

Tstg

Limits

120

5

50

300(TOTAL)

150

−55 to +150

Unit

V

mA

mW

°C

∗

200mW per element must not be exceeded. PNP type negative symbols have been omitted.

SymbolParameter Symbol

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Storage temperature

∗

zPackage, marking, and packaging specifications

Part No. FMY5

SMT5

Y5

T148

3000

Package

Marking

Code

Basic ordering unit (pieces)

FMY5

Transistor

Rev.B 2/4

zElectrical characteristics (Ta=25°C)

Note:The slash denotes NPN/PNP. PNP type negative symbols have been omitted. ∗Transition frequency of the device.

Parameter Symbol Min. Typ. Max. Unit Conditions

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

120

5

−

0.5

V

µA

V

I

C

=

50/

−

50µA

I

C

=

1/

−

1mA

I

E

=

50/

−

50µA

V

CB

=

100/

−

100V

V

EB

=

4/

−

4V

I

C

=

10/

−

10mA, I

B

=

1/

−

1mA

h

FE

180

−

820

−

V

CE

=

6/

−

6V, I

C

=

2/

−

2mA

f

T

Cob

−

140

3/4

−

MHz

pF

V

CE

=

12/

−

12V, I

E

=

−

2/2mA, f

=

100MHz

V

CB

=

12/

−

12V, I

E

=

0A, f

=

1MHz

∗

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff curren

Collector-emitter saturation voltage

DC current

transfer ratio

Transition frequency

Output capacitance

z

Electrical characteristics curves

Tr1

0 −20−16−12−8−4

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

−2

−4

−6

−8

−10

COLLECTOR CURRENT : I

C

(mA)

Fig.1 Ground emitter output characteristics

Ta=25°C

−

25.0

−22.5

−20.0

−

17.5

−15.0

−

12.5

−10.0

−

7.5

−5.0

−2.5µA

I

B

=0

0 −1.6−1.4−1.2−1.0−0.8−0.6−0.4−0.2

BASE TO EMITTER VOLTAGE : V

BE

(V)

−0.1

−0.2

−0.5

−1

−2

−5

−10

−20

−50

COLLECTOR CURRENT : I

C

(mA)

Fig.2 Ground emitter propagation

characteristics

V

CE

= −6V

Ta=25°C

500

200

100

50

−0.2 −0.5 −1 −2 −5 −10 −20 −50

Fig.3 DC current gain vs. collector current

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(mA)

Ta=25°C

V

CE

= −1V

−5V

−

3V

−0.05

−0.1

−0.2

−0.5

−0.2 −0.5 −1 −2 −5 −10 −20 −50

Fig.4 Collector-Emitter saturation voltage

vs. collector current

COLLECTOR SATURATION VOLTAGE : V

CE(sat) (V)

COLLECTOR CURRENT : I

C

(mA)

Ta=25°C

I

C

/I

B

=50/1

20/1

10/1

500

200

100

50

0.5 1 2 5 10 20 50

V

CE

= −6V

Fig.5 Transition frequency

vs. emitter current

TRANSITION FREQUENCY : f

T

(MH

Z

)

EMITTER CURRENT : I

E

(mA)

Ta=25°C

10

20

5

2

1

−0.5 −1 −2 −5 −10 −20

f=1MH

Z

I

E

=0A

Fig.6 Collector output capacitance

vs. collector-base voltage

COLLECTOR OUTPUT CAPACITANCE : Cob

(pF)

COLLECTOR TO BASE VOLTAGE : V

CB

(V)

Ta=25°C

Cob

FMY5

Transistor

Rev.B 3/4

10

20

5

2

1

−0.5 −1 −2 −5 −10 −20

Fig.7 Emitter input capacitance

vs. emitter-base voltage

EMITTER INPUT CAPACITANCE : Cib (pF)

EMITTER TO BASE VOLTAGE : VEB

(V)

Cib

f=1MH

Z

I

C

=0A

Ta=25

°C

Tr2

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.8 Ground emitter output characteristics

2

4

6

8

10

4 8 12 16 20

0

I

B

=0µA

2.5

5.0

7.5

10.0

12.5

15.0

17.5

20.0

22.5

25.0

Ta

=

25

°C

COLLECTOR CURRENT : I

C

(mA)

BASE TO EMITTER VOLTAGE : V

BE

(V)

Fig.9 Ground emitter propagation characteristics

0

0.1

0.2

0.5

1

2

5

10

20

50

0.2 0.6 0.4 0.8 1.0 1.2 1.4 1.6

Ta

=

25

°

C

V

CE

=

6V

COLLECTOR CURRENT : I

C

(mA)

DC CURRENT GAIN : h

FE

Fig.10 DC current gain vs. collector current

0.2 0.5

12 510

20 50

50

100

200

500

Ta

=

25

°C

V

CE

=

1V

3

V

5

V

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

Fig.11 Collector-emitter saturation voltage

vs. collector current ( )

12 510

20 50

0.02

0.05

0.1

0.2

0.5

Ta

=

25

°

C

I

C

/I

B

=50

10

20

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

Fig.12 Collector-emitter saturation voltage

vs. collector current ( )

12 510

20 50

0.02

0.05

0.1

0.2

0.5

Ta

=

100

°C

25

°C

−40

°C

I

C

/I

B

=10

COLLECTOR CURRENT : I

E

(mA)

TRANSITION FREQUENCY : f

T

(MHz)

Fig.13 Transition frequency vs. emitter current

−0.5 −1 −2 −5 −10 −20 −50

100

200

500

50

V

CE

=

6V

Ta

=

25

°C

FMY5T148

FMY5T148

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