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DMG302PU-7

P1-P3P4-P6
DMG302PU
Document number: DS36227 Rev. 2 - 2
1 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMG302PU
NEW PRODUCT
D
S
G
Gate Protection
Diode
25V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
-25V
10Ω @ V
GS
= -4.5V -0.17A
13Ω @ V
GS
= -2.7V -0.15A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• DC-DC Converters
• Power Management Functions
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Small Surfaced Mount Package
• ESD Protected Gate (>6kV Human Body Model)
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Compliance Case Packaging
DMG302PU-7 Standard SOT23 3,000/Tape & Reel
DMG302PU-13 Standard SOT23 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
D
G
S
Top View
Pin Configuration
Equivalent Circuit
e3
ESD HBM >6kV
13P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
13P
13P
DMG302PU
Document number: DS36227 Rev. 2 - 2
2 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMG302PU
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-25 V
Gate-Source Voltage
V
GSS
-8 V
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-0.17
-0.14
A
Continuous Drain Current (Note 6) V
GS
= -2.7V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-0.15
-0.12
A
Pulsed Drain Current T
P
≤ 300µs, Duty Cycle = 2%) I
DM
-0.5 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
0.33
W
(Note 6) 0.45
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
376
°C/W
(Note 6) 275
Thermal Resistance, Junction to Case
(Note 6)
R
θJC
81
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-25
⎯ ⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
-1 µA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
-100 nA
V
GS
= -8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.65 -0.96 -1.5 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS(ON)
⎯
2.5 10
Ω
V
GS
= -4.5V, I
D
= -0.2A
⎯
3 13
V
GS
= -2.7V, I
D
= -0.05A
Forward Transfer Admittance
|Y
fs
|
⎯
189
⎯
ms
V
DS
= -5V, I
D
= -0.2A
Diode Forward Voltage (Note 7)
V
SD
⎯ ⎯
-1.5 V
V
GS
= 0V, I
S
= -0.2A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
27.2
⎯
pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
6.1
⎯
Reverse Transfer Capacitance
C
rss
⎯
1.7
⎯
Total Gate Charge
Q
g
⎯
0.35
⎯
nC
V
DS
= -5V, I
D
= -0.2A,
V
GS
= -4.5V,
Gate-Source Charge
Q
gs
⎯
0.08
⎯
Gate-Drain Charge
Q
gd
⎯
0.06
⎯
Turn-On Delay Time
t
d(on)
⎯
4.5
⎯
ns
V
GS
= -4.5V, V
DD
= -6V
I
D
= -0.2A, R
G
= 50Ω
Rise Time
t
r
⎯
2.3
⎯
Turn-Off Delay Time
t
d(off)
⎯
24.1
⎯
Fall Time
t
f
⎯
11.0
⎯
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG302PU
Document number: DS36227 Rev. 2 - 2
3 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMG302PU
NEW PRODUCT
-V , DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
012345
V = -2.0V
GS
V = -4.0V
GS
V = -4.5V
GS
V = -8.0V
GS
V= -1.2V
GS
V = -1.5V
GS
V = -2.5V
GS
V = -2.7V
GS
V = -3.0V
GS
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
T = 150C
A
°
T = 125C
A
°
T = 85C
A
°
T = 25C
A
°
T = -55C
A
°
V = -5.0V
DS
-I , DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
5.5
0 0.2 0.4 0.6 0.8 1
6.0
4.5
5.0
3.5
4.0
2.5
3.0
1.5
2.0
0.5
1.0
0
V = -2.7V
GS
V = -4.5V
GS
-I , DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
1
2
3
4
5
6
7
8
9
10
0 0.2 0.4 0.6 0.8 1
T = -55C
A
°
T = 25C
A
°
T = 85C
A
°
T = 125C
A
°
T = 150C
A
°
V = -4.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 5 On-Resistance Variation with Temperature
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.6
0.8
1
1.2
1.4
1.6
1.8
V = -4.5V
I = -300mA
GS
D
V = -8V
I = -500mA
GS
D
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 6 On-Resistance Variation with Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(on)
Ω
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V= -8V
I= A
GS
D
-500m
V=5V
I= A
GS
D
-4.
-300m
P1-P3P4-P6

DMG302PU-7

Mfr. #:
Buy DMG302PU-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 25V P-Ch Enh FET 27.2pF 0.35nC
Lifecycle:
New from this manufacturer.
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