Philips Semiconductors
PHM30NQ10T
TrenchMOS™ standard level FET
Product data Rev. 02 — 11 September 2003 5 of 13
9397 750 11842
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
6. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage I
D
= 250 µA; V
GS
=0V
T
j
=25°C 100 - - V
T
j
= −55 °C 89--V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
; Figure 9
T
j
=25°C 234V
T
j
= 150 °C 1.2 - - V
T
j
= −55 °C - - 4.4 V
I
DSS
drain-source leakage current V
DS
=80V; V
GS
=0V
T
j
=25°C --1µA
T
j
= 150 °C - - 100 µA
I
GSS
gate-source leakage current V
GS
= ±20 V; V
DS
= 0 V - 10 100 nA
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
=18A;Figure 7 and 8
T
j
=25°C - 17 20 mΩ
T
j
= 150 °C - 37.4 44 mΩ
Dynamic characteristics
Q
g(tot)
total gate charge I
D
= 25 A; V
DD
=50V; V
GS
=10V;Figure 13 - 53.7 - nC
Q
gs
gate-source charge - 13.2 - nC
Q
gd
gate-drain (Miller) charge - 11.5 - nC
C
iss
input capacitance V
GS
=0V; V
DS
= 25 V; f = 1 MHz; Figure 11 -3600-pF
C
oss
output capacitance - 430 - pF
C
rss
reverse transfer capacitance - 140 - pF
t
d(on)
turn-on delay time V
DD
=50V;R
L
=56Ω;V
GS
=10V;R
G
= 5.6 Ω -21-ns
t
r
rise time -11-ns
t
d(off)
turn-off delay time - 77 - ns
t
f
fall time -51-ns
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 18 A; V
GS
=0V;Figure 12 - 0.91 1.2 V
t
rr
reverse recovery time I
S
= 10 A; dI
S
/dt = −100 A/µs; V
GS
= 0 V - 100 - ns
Q
r
recovered charge - 125 - nC