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MT18JDF51272PZ-1G6K1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 10: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
2GB, 4GB (x72, ECC, SR) 240-Pin DDR3 VLP RDIMM
DRAM Operating Conditions
PDF: 09005aef83a06a34
jdf18c256_512x72pz.pdf - Rev. H 4/13 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 11: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision G)
Values are for the MT41J256M4 DDR3 SDRAM only and are computed from values specified in the 1Gb (256 Meg x 4) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1260 1170 1080 mA
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
I
DD1
1620 1530 1440 mA
Precharge power-down current: Slow exit I
DD2P0
216 216 216 mA
Precharge power-down current: Fast exit I
DD2P1
540 540 450 mA
Precharge quiet standby current I
DD2Q
720 630 630 mA
Precharge standby current I
DD2N
810 720 630 mA
Precharge standby ODT current I
DD2NT
990 900 810 mA
Active power-down current I
DD3P
630 540 540 mA
Active standby current I
DD3N
810 720 720 mA
Burst read operating current I
DD4R
2520 2250 1890 mA
Burst write operating current I
DD4W
2610 2250 1980 mA
Refresh current I
DD5B
3060 2970 2880 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
144 144 144 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
180 180 180 mA
All banks interleaved read current I
DD7
4410 4230 3510 mA
Reset current I
DD8
252 252 252 mA
2GB, 4GB (x72, ECC, SR) 240-Pin DDR3 VLP RDIMM
I
DD
Specifications
PDF: 09005aef83a06a34
jdf18c256_512x72pz.pdf - Rev. H 4/13 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 12: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision M)
Values are for the MT41J512M4 DDR3 SDRAM only and are computed from values specified in the 2Gb (512 Meg x 4) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1260 1170 1080 mA
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
I
DD1
1440 1350 1260 mA
Precharge power-down current: Slow exit I
DD2P0
216 216 216 mA
Precharge power-down current: Fast exit I
DD2P1
666 576 486 mA
Precharge quiet standby current I
DD2Q
720 630 540 mA
Precharge standby current I
DD2N
774 584 594 mA
Precharge standby ODT current I
DD2NT
810 720 630 mA
Active power-down current I
DD3P
900 810 720 mA
Active standby current I
DD3N
990 900 810 mA
Burst read operating current I
DD4R
2538 2268 2070 mA
Burst write operating current I
DD4W
2640 2070 1800 mA
Refresh current I
DD5B
3510 3420 3330 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
216 216 216 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
270 270 270 mA
All banks interleaved read current I
DD7
4320 4050 3780 mA
Reset current I
DD8
252 252 252 mA
2GB, 4GB (x72, ECC, SR) 240-Pin DDR3 VLP RDIMM
I
DD
Specifications
PDF: 09005aef83a06a34
jdf18c256_512x72pz.pdf - Rev. H 4/13 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

MT18JDF51272PZ-1G6K1

Mfr. #:
Buy MT18JDF51272PZ-1G6K1
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 4GB 240RDIMM
Lifecycle:
New from this manufacturer.
Delivery:
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