Microchip Technology Company
©2012 Silicon Storage Technology, Inc. DS70675A 03/12
Product Brief
www.microchip.com
Features
• Excellent RF Stability with Moderate Gain:
– Typically 23.5 dB gain across 2.4 – 2.5 GHz
• High Linear Output Power (at 3.3V):
– Meets 802.11g OFDM ACPR requirement up to 22 dBm
– ~2.5% added EVM up to 18 dBm for 54 Mbps 802.11g signal
– Meets 802.11b ACPR requirement up to 22 dBm
• High Power-added Efficiency/Low Operating Current
for 802.11b/g/n Applications
– ~33% @ P
OUT
= 22 dBm for 802.11g
• Limited variation over temperature
– 2.5 dB gain variation between -40°C to +85°C
– 1 dB power variation between -40°C to +85°C
• Low Shut-down Current: <2.5 µA (typical)
• Temperature and load insensitive on-chip power
detector
– >15dB dynamic range
– <+/- 0.3dB variation between 0°C to +85°C
– <+/- 0.4dB variation with 2:1 VSWR mismatch
– <+/- 0.3dB variation Ch1 through Ch14
• Simple input/output matching
• Packages Available
– 6-contact XSON – 1.5mm x 1.5mm
– 8-contact XSON – 2mm x 2mm
• All Non-Pb (lead-free) Devices are RoHS Compliant
Applications
• WLAN (IEEE 802.11b/g/n)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
Block Diagram
Product Ordering
Valid combinations for SST12LP14E
SST12LP14E-QX8E SST12LP14E-QX6E
SST12LP14E Evaluation Kits
SST12LP14E-QX8E-K SST12LP14E-QX6E-K
Note: Valid combinations are those products in mass produc-
tion or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations
and to determine availability of new combinations.
RF
IN
V
CCB
V
REF
DET
V
CC1
V
CC2
RF
OUT
75021 B1.0
Bias Circuit
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP14E
SST12LP14E is a high-efficiency, ultra-compact power amplifier (PA) based on
the highly-reliable InGaP/GaAs HBT technology. Designed to operate over the 2.4
- 2.5 GHz frequency band, SST12LP14E typically provides 23.5 dB gain with 33%
power-added efficiency at 22 dBm output.This power amplifier has excellent lin-
earity while meeting 802.11g spectrum mask requirements up to 22 dBm. The
device typically consumes only 95 mA total current at 18 dBm output power, with
linear 54 Mbps 802.11g modulation. This efficiency is desirable in embedded
applications such as in hand-held units. The SST12LP14E also features easy,
board-level usage along with high-speed power-up/-down control through a single
combined reference voltage pin and is offered in both 6- and 8-contact XSON
packages.
