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NIS5132MN1TXG
P1-P3
P4-P6
P7-P9
P10-P11
NIS5132 Series
http://onsemi.com
4
10
0
30
20
50
40
60
0.1
1
10
100
1000
10000
100000
POWER (W)
TIME (ms)
25
_
C
80
_
C
50
_
C
Figure 2. Power Dissipation vs. Thermal T
rip Time
Figure 3. Application Circuit with Direct Current Sensing
LOAD
GND
ENABLE
+12 V
R
S
NIS5132
SOURCE
V
CC
ENABLE
I
LIMIT
dv/dt
GND
10
9
8
7
6
4
11
3
12
Figure 4. Application Circuit with Kelvin Current Sensing
LOAD
GND
ENABLE
+12 V
R
S
NIS5132
SOURCE
V
CC
ENABLE
I
LIMIT
dv/dt
GND
10
9
8
7
6
4
11
3
12
NIS5132 Series
http://onsemi.com
5
Figure 5. Common Thermal Shutdown
SOURCE
V
CC
ENABLE
I
LIMIT
dv/dt
GND
LOAD
ENABLE
R
S
LOAD
SOURCE
V
CC
I
LIMIT
ENABLE
dv/dt
GND
NIS5135
NIS5132
NIS5132 Series
http://onsemi.com
6
7.4
7.6
7.8
8
8.2
8.4
8.6
8.8
9
−
50
−
25
0
25
50
75
100
125
150
TEMPERA
TURE (
°
C)
UVLO (V)
Figure 6. UVLO T
urn
−
On
0.72
0.74
0.76
0.78
0.8
0.82
0.84
0.86
−
50
−
25
0
25
50
75
100
125
150
TEMPERA
TURE (
°
C)
Figure 7. UVLO Hysteresis
HYST (V)
14.5
14.6
14.7
14.8
14.9
15
15.1
15.2
15.3
−
50
−
25
0
25
50
75
100
125
150
VOL
T
AGE (V)
TEMPERA
TURE (
°
C)
Figure 8. Output Clamping V
oltage
(MN1 & MN2 only)
0.85
0.9
0.95
1
1.05
−
50
−
25
0
25
50
75
100
125
150
TEMPERA
TURE (
°
C)
Figure 9. Output V
oltage dv/dt Rate
RAMP TIME (ms)
Figure 10. Input T
ransient Response
0
400
800
1200
1600
0.5
0.6
0.7
0.8
CURRENT (mA)
Figure 1
1. Body Diode Forward
Characteristics
FORW
ARD VOL
T
AGE (V)
P1-P3
P4-P6
P7-P9
P10-P11
NIS5132MN1TXG
Mfr. #:
Buy NIS5132MN1TXG
Manufacturer:
ON Semiconductor
Description:
Resettable Fuses - PPTC 12 V Electronic Fuse
Lifecycle:
New from this manufacturer.
Delivery:
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Ups
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EMS
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