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VS-150MT060WDF-P

P1-P3P4-P6P7-P9P10-P11
VS-150MT060WDF-P
www.vishay.com
Vishay Semiconductors
Revision: 09-Oct-17
7
Document Number: 96009
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 17 - t
rr
vs. dI
F
/dt
(Typical Antiparallel Diode Reverse Recovery Time vs. dI
F
/dt)
V
rr
= 200 V, I
F
= 10 A
Fig. 18 - I
rr
vs. dI
F
/dt
(Typical Antiparallel Diode Reverse Recovery Current vs. dI
F
/dt)
V
rr
= 200 V, I
F
= 10 A
Fig. 19 - Q
rr
vs. dI
F
/dt
(Typical Antiparallel Diode Reverse Recovery Charge vs. dI
F
/dt)
V
rr
= 200 V, I
F
= 10 A
Fig. 20 - t
rr
vs. dI
F
/dt
(Typical Chopper Diode Reverse Recovery Time vs. dI
F
/dt)
V
rr
= 200 V, I
F
= 50 A
Fig. 21 - I
rr
vs. dI
F
/dt
(Typical Chopper Diode Reverse Recovery Current vs. dI
F
/dt)
V
rr
= 200 V, I
F
= 50 A
Fig. 22 - Q
rr
vs dI
F
/dt
(Typical Chopper Diode Reverse Recovery Charge vs. dI
F
/dt)
V
rr
= 200 V, I
F
= 50 A
60
80
100
120
140
160
180
200
100200300400500
t
rr
(ns)
dI
F
/dt (A/μs)
T
J
= 25 °C
T
J
= 125 °C
4
6
8
10
12
14
16
18
20
22
24
26
28
30
100 200 300 400 500
I
rr
(A)
dI
F
/dt (A/μs)
T
J
= 25 °C
T
J
= 125 °C
300
500
700
900
1100
1300
1500
1700
1900
100 200 300 400 500
Q
rr
(nC)
dI
F
/dt (A/μs)
T
J
= 25 °C
T
J
= 125 °C
40
60
80
100
120
140
160
180
200
100200300400500
t
rr
(ns)
dI
F
/dt (A/μs)
T
J
= 25 °C
T
J
= 125 °C
0
2
4
6
8
10
12
14
16
18
20
100 200 300 400 500
I
rr
(A)
dI
F
/dt (A/μs)
T
J
= 25 °C
T
J
= 125 °C
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
100 200 300 400 500
Q
rr
(nC)
dI
F
/dt (A/μs)
T
J
= 25 °C
T
J
= 125 °C
VS-150MT060WDF-P
www.vishay.com
Vishay Semiconductors
Revision: 09-Oct-17
8
Document Number: 96009
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 23 - Z
thJC
vs. t
1
Rectangular Pulse Duration
(Maximum Thermal Impedance Z
thJC
Characteristics - (IGBT))
Fig. 24 - Z
thJC
vs. t
1
Rectangular Pulse Duration
(Maximum Thermal Impedance Z
thJC
Characteristics - (Chopper Diode))
CIRCUIT CONFIGURATION
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
t
1
- Rectangular Pulse Duration (s)
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
t
1
- Rectangular Pulse Duration (s)
0.50
0.20
0.10
0.05
0.02
0.01
DC
D1
E7
G6
Th
A7
E6
D2
Q1
E1
F1
D3
D4
G7
M7
Q4
B1
A1
I1
L1
M3
M2
VS-150MT060WDF-P
www.vishay.com
Vishay Semiconductors
Revision: 09-Oct-17
9
Document Number: 96009
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95567
Device code
2
3
4
5
6
51 32 4 6 7
1
-Vishay Semiconductors product
- Current rating (150 = 150 A)
-Essential part number (MT = MTP package)
- Voltage code x 10 = voltage rating (example: 060 = 600 V)
- Die IGBT technology (W = warp speed IGBT)
- Circuit conguration (DF = dual forward)
7 - Pinout code (PressFit pins)
VS- 150 MT 060 W DF -P
P1-P3P4-P6P7-P9P10-P11

VS-150MT060WDF-P

Mfr. #:
Buy VS-150MT060WDF-P
Manufacturer:
Vishay
Description:
OUTPUT & SW MODULES - MTP SWITCH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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