TZM-Series
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Vishay Semiconductors
Rev. 1.6, 22-Nov-12
4
Document Number: 84122
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BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
Fig. 2 - Typical Change of Working Voltage under Operating
Conditions at T
amb
= 25 °C
Fig. 3 - Typical Change of Working Voltage vs.
Junction Temperature
Fig. 4 - Temperature Coefficient of V
Z
vs. Z-Voltage
Fig. 5 - Diode Capacitance vs. Z-Voltage
Fig. 6 - Forward Current vs. Forward Voltage
0 120 160
0
100
300
400
500
600
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
200
95 9602
200
80
40
10 15 20
1
10
100
1000
V
Z
- Voltage Change (mV)
V
Z
- Z-Voltage (V)
25
95 9598
T
j
= 25 °C
I
Z
= 5 mA
0
5
- 60 60 120 180
0.8
0.9
1.0
1.1
1.2
1.3
V
Ztn
- Relative Voltage Change
T
j
- Junction Temperature (°C)
240
95 9599
0
V
Ztn
= V
Zt
/V
Z
(25 °C)
0
TK
VZ
= 10 x 10
-4
/K
8 x 10
-4
/K
2 x 10
-4
/K
6 x 10
-4
/K
4 x 10
-4
/K
- 4 x 10
-4
/K
- 2 x 10
-4
/K
- 5
0
5
10
15
V
Z
- Z-Voltage (V)
95 9600
I
Z
= 5 mA
0 10 203040 50
TK
VZ
- Temperature Coefficient
of V
Z
(10
-4
/K)
10 15
0
50
100
150
200
C
D
- Diode Capacitance (pF)
V
Z
- Z-Voltage (V)
25
95 9601
20
T
j
= 25 °C
V
R
= 2 V
0
5
0 0.2 0.4 0.6 0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
T
j
= 25 °C
