
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY15P15T IXTA15P15T
IXTP15P15T
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Note 1: Pulse test, t 300s, duty cycle, d 2%.
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= -10V, I
D
= 0.5 • I
D25
, Note 1 9 15 S
C
iss
3650 pF
C
oss
V
GS
= 0V, V
DS
= - 25V, f = 1MHz 210 pF
C
rss
55 pF
t
d(on)
21 ns
t
r
14 ns
t
d(off)
36 ns
t
f
11 ns
Q
g(on)
48 nC
Q
gs
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
17 nC
Q
gd
12 nC
R
thJC
0.83 C/W
R
thCS
TO-220 0.50 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V - 15 A
I
SM
Repetitive, Pulse Width Limited by T
JM
- 60 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 -1.3 V
t
rr
116 ns
Q
RM
638 nC
I
RM
- 11 A
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3 (External)
I
F
= 0.5 • I
D25
, -di/dt = -100A/s
V
R
= - 100V, V
GS
= 0V