PSMN057-200P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 02 — 4 January 2011 7 of 13
NXP Semiconductors
PSMN057-200P
N-channel TrenchMOS SiliconMAX standard level FET
T
j
= 25 °C T
j
= 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
V
DS
> I
D
x R
DSon
V
DS
> I
D
x R
DSon
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 9. Forward transconductance as a function of
drain current; typical values
I
D
= 1 mA; V
DS
= V
GS
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 11. Gate-source threshold voltage as a function of
junction temperature
0
50
I
D
(A)
V
DS
(V)
021.60.8 1.20.4
003aae618
40
30
20
10
V
GS
(V) = 10
4.8
5
5.2
6
8
4.4
4.2
4.6
0.02
0.14
R
DS(on)
(Ω)
I
D
(A)
0504020 3010
003aae619
0.10
0.06
V
GS
(V) = 10
4.64.4
5.2
5
6
4.2
4.8
V
GS
(V)
0426
40
I
D
(A)
0
30
20
10
T
j
= 175 °C T
j
= 25 °C
50
g
fs
(S)
0
I
D
(A)
040302010
003aae621
10
20
30
40
T
j
= 25 °C
T
j
= 175 °C
1.3
2.1
2.9
a
0.5
003aae622
T
j
(°C)
−60 18010020
2
3
1
4
5
V
GS(th)
(V)
0
003aae623
T
j
(°C)
−60 18010020
maximum
minimum
typical
