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SI7434DP-T1-E3

P1-P3P4-P6P7-P9P10-P12
Si7434DP
www.vishay.com
Vishay Siliconix
S09-0271-Rev. C, 16-Feb-09
1
Document Number: 72579
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 250 V (D-S) MOSFET
FEATURES
• PWM-optimized TrenchFET
®
power MOSFET
• 100 % R
g
tested
•Avalanche tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Primary side switch in:
- Telecom power supplies
- Distributed power architectures
- Miniature power modules
Notes
a. Surface mounted on 1" x 1" FR4 board
b. See solder profile (www.vishay.com/doc?73257). The PowerP
AK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
PRODUCT SUMMARY
V
DS
(V) 250
R
DS(on)
max. () at V
GS
= 10 V 0.155
R
DS(on)
max. () at V
GS
= 6 V 0.162
Q
g
typ. (nC) 34
I
D
(A) 3.8
Configuration Single
PowerPAK
®
SO-8 Single
Top View
1
6.15 mm
5.15 mm
Bottom View
4
G
3
S
2
S
1
S
D
8
D
6
D
7
D
5
Available
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package PowerPAK SO-8
Lead (Pb)-free Si7434DP-T1-E3
Lead (Pb)-free and halogen-free Si7434DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL 10 s STEADY STATE UNIT
Drain-source voltage V
DS
250 250
V
Gate-source voltage V
GS
± 20 ± 20
Continuous drain current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
3.8 2.3
A
T
A
= 70 °C 3 1.8
Pulsed drain current I
DM
40 40
Continuous source current (diode conduction)
a
I
S
4.3 1.6
Avalanche current L = 1 mH I
AS
13 13
Single pulse avalanche energy E
AS
8.4 8.4 mJ
Maximum power dissipation
a
T
A
= 25 °C
P
D
5.2 1.9
W
T
A
= 70 °C 3.3 1.2
Operating junction and storage temperature range T
J
, T
stg
-55 to +150
°C
Soldering recommendations (peak temperature)
b, c
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient
a
t 10 s
R
thJA
19 24
°C/WSteady state 52 65
Maximum junction-to-case (drain) Steady state R
thJC
1.5 1.8
Si7434DP
www.vishay.com
Vishay Siliconix
S09-0271-Rev. C, 16-Feb-09
2
Document Number: 72579
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Gate threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2 - 4 V
Gate-body leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
DS
= 250 V, V
GS
= 0 V - - 1
μA
V
DS
= 250 V, V
GS
= 0 V, T
J
= 55 °C - - 15
On-state drain current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V 30 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 3.8 A - 0.129 0.155
V
GS
= 6 V, I
D
= 3.7 A - 0.131 0.162
Forward transconductance
a
g
fs
V
DS
= 15 V, I
D
= 3.8 A - 14 - S
Diode forward voltage
a
V
SD
I
S
= 2.8 A, V
GS
= 0 V - 0.75 1.2 V
Dynamic
b
Total gate charge Q
g
V
DS
= 100 V, V
GS
= 10 V, I
D
= 3.8 A
-3450
nCGate-source charge Q
gs
-6.8-
Gate-drain charge Q
gd
-10.5-
Gate resistance R
g
0.6 1.2 1.8
Turn-on delay time t
d(on)
V
DD
= 100 V, R
L
= 25
I
D
4 A, V
GEN
= 10 V, R
g
= 6
-1625
ns
Rise time t
r
-2335
Turn-off delay time t
d(off)
-4770
Fall time t
f
-1930
Source-drain reverse recovery time t
rr
I
F
= 2.8 A, di/dt = 100 A/μs - 100 150
Si7434DP
www.vishay.com
Vishay Siliconix
S09-0271-Rev. C, 16-Feb-09
3
Document Number: 72579
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
Capacitance
0
6
12
18
24
30
0246810
V
GS
= 10 V thru 6 V
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
5 V
0
5
10
15
20
25
30
35
40
0123456
T
C
= 125 °C
-55 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
- On-Resistance (R
DS(on)
Ω
)
0.00
0.06
0.12
0.18
0.24
0.30
0 8 16 24 32 40
I
D
- Drain Current (A)
V
GS
= 6 V
V
GS
= 10 V
0
2
4
6
8
10
0 7 14 21 28 35
V
DS
= 100 V
I
D
= 3.8 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
50
10
1
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
0
500
1000
1500
2000
2500
0 50 100 150 200 250
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
P1-P3P4-P6P7-P9P10-P12

SI7434DP-T1-E3

Mfr. #:
Buy SI7434DP-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 250V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Delivery:
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