SB160E-G

Low VF/ESD Leaded Schottky Barrier Rectifiers
MDS0906002A
Page 1
SB120E-G thru SB1100E-G
Voltage Range: 20 to 100 V
Current:
1.0 A
"-G" : RoHS Device
• Case: Molded plastic body DO-41
• Epoxy: UL94-V0 rated flame retardant
• Terminals: Solderable per MIL-STD-750 Method 2026
• Polarity: Color band denotes cathode end
• Mounting Position: Any
• Weight: 0.012 ounces, 0.34 grams
• Low drop down voltage
• 1.0A operation at TA=75°C with no thermal runaway
• For use in low voltage, high frequency invertors free
wheeling and polarity protection
• Silicon epitaxial planar chips
• Electrostatic discharge (ESD) test under IEC61000-4-2:
standard: >15KV (air) & >8KV (contact)
• Lead-free part, meet RoHS requirements
Symbols 120E 140E 145E 150E 160E 180E 1100E Units
Maximum Recurrent Peak Reverse Voltage VRRM 20 40 45 50 60 80 100 Volts
Maximum RMS Voltage VRMS 14 28 30 35 42 56 70 Volts
Maximum DC Blocking Voltage VDC 20 40 45 50 60 80 100 Volts
Maximum Average Forward Rectified Current
0.375” (9.5mm) lead length at TA=75°C, See Figure 1
Peak Forward Surge Current
8.3mS single half sine-wave superimp osed on IFSM 30 Amps
rated load (JEDEC Method) TL=110°C
Maximum Forward Voltage at 1.0A (Note 1) VF 0.50 0.70 0.85 Volts
Maximum DC Reverse Current TA= 25°C
at Rated DC Blocking Voltage TA=100°C
Typical Junction Capacitance (Note 2) CJ 110 pF
Typical Thermal Resistance (Note 3) RθJA 80.0
RθJL 30.0
Operating Junction Temperature Range TJ -65 ~ +125 -65 ~ +150 °C
Storage Temperature Range TSTG -65 ~ +150 °C
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
FEATURES
MECHANICAL DATA
Unit :inch(mm)
1.0(25.4) Min.
1.0(25.4) Min.
.205(5 .2 )
.160(4 .1 )
.107(2.7)
.080(2.0)
.034(0.86)
.028(0.70)
IAV 1.0 Amps
IR mA
°C/W
0.5
10 5
Note 1. Pulse test: 300µS pu lse wi dth, 1% du ty cycle
2. Me asured at 1.0MH z an d ap plied reverse voltage of 4.0 Volts
3. Therma l resistance from junction to am bient and from junction to lead P.C.B. mo unted 0. 375” (9.5mm) lead length
DO-41
MDS0906002A
Page 2
Low VF/ESD Leaded Schottky Barrier Rectifiers
RATINGS AND CHARACTERISTIC CURVES SB120E-G thru SB1100E-G
Reverse Voltage (Volts)
1 10 100
Percent of Rated Peak Reverse Voltage ( %)
Fig.1 - Forward Current Derating Curve
Average Forward Current (A)
0 25 50 75 100 125 150 175
Lead Temperature ( °C)
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
1.2
1.0
0.8
0.6
0.4
0.2
Fig. 3 - Typical Instantaneour Forward
Characteristics
Fig. 4A - Typical Reverse Characteristics
Instantaneous Forward Voltage (Volts)
Instantaneous Forward Current (A)
Instantaneous Reverse Current (mA)
Fig. 5 - Typical Junction Capacitance
0.1 1.0 10 100
Junction Capacitance (pF)
100
1000
Fig. 4B - Typeical Reverse Characteristic
1
10
100
TL=110°C
8.3mS single half sine-wave
(JEDEC Method)
SB120E - SB145E
SB150E - SB1100E
single phase half wave 60Hz
resistive or inductive load
3.75(9.5mm) lead length
0 0.2 0.4 0.6 0.8 1.0
pulse width =300µS
1% duty cycle, Tj=25°C
10
1.0
0.1
0.01
SB120E - SB145E
SB150E - SB160E
SB180E - SB1100E
10
TJ=25°C
f=1.0MHz
Instantaneous Reverse Current (µA)
Percent of Rated Peak Reverse Voltage ( %)
TJ=25°C
TJ=75°C
TJ=125°C
SB120E - SB145E
SB150E - SB1100E
0 20 40 60 80 100 120 140
100
10
1.0
0.1
0.01
0.001
1000
100
10
1.0
0.1
0.01
0 20 40 60 80 100
TJ=25°C
TJ=100°C
TJ=125°C
TJ=150°C

SB160E-G

Mfr. #:
Manufacturer:
Comchip Technology
Description:
Schottky Diodes & Rectifiers Low VF ESD 1A 60V Schottky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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