Characteristics STTH2R02AF-Y
2/8 DocID027544 Rev 1
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.71 x I
F(AV)
+ 0.06 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at T
j
= 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
T
j
= -40 °C
200 V
I
F(AV)
Average forward current, square waveform T
L
= 129 °C, δ
= 0.5 2 A
I
FSM
Surge current non repetitive forward current
t
p
= 8.3 ms
sinusoidal
50 A
T
stg
Storage temperature range -65 to + 175 °C
T
j
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
Operating temperature range -40 to + 175 °C
Table 3. Thermal resistance
Symbol Parameter Typ. Max. Unit
R
th(j-l)
Junction to lead 16 24 °C/W
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: tp = 5 ms, δ < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
0.8
µA
T
j
= 125 °C 1 8
V
F
(2)
2. Pulse test: tp = 380 µs, δ < 2%
Forward voltage drop
T
j
= 25 °C
I
F
= 2 A
0.91 1.02
V
T
j
= 150 °C 0.72 0.83
Table 5. Dynamic electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time
T
j
= 25 °C
I
F
= 1 A, dI
F
/dt = -100 A/µs
V
R
= 30 V
15 20
ns
I
F
= 1 A, dI
F
/dt = 50 A/µs
V
R
= 30 V
22
T
j
= 125 °C
I
F
= 2 A, dI
F
/dt = 200 A/µs
V
R
= 160 V
22
Q
RR
Reverse recovery
charge
T
j
= 125 °C
I
F
= 2 A, dI
F
/dt = -200 A/µs,
V
R
= 160 V
40 nC
I
RM
Reverse recovery
current
3A
