APTC60HM24T3G Datasheet APTC60HM24T3G | P1-P3

APTC60HM24T3G

APTC60HM24T3G – Rev 2 November, 2017

www.microsemi.com

1

–

7

All multiple inputs and outputs must be shorted together

Example: 13/14 ; 29/30 ; 22/23 …

All ratings @ T

j

= 25°C unless otherwise specified

Absolute maximum ratings (per super junction MOSFET)

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Symbol Parameter Max ratings Unit

V

DSS

Drain - Source Voltage 600 V

I

D

Continuous Drain Current

T

c

= 25°C 95

A

T

c

= 80°C 70

I

DM

Pulsed Drain current 260

V

GS

Gate - Source Voltage ±20 V

R

DSon

Drain - Source ON Resistance 24

m

P

D

Power Dissipation T

c

= 25°C 462 W

I

AR

Avalanche current (repetitive and non repetitive) 15 A

E

AR

Repetitive Avalanche Energy 3

mJ

E

AS

Single Pulse Avalanche Energy 1900

Application

 Welding converters

 Switched Mode Power Supplies

 Uninterruptible Power Supplies

 Motor control

Features

 Super junction MOSFET

- Ultra low R

DSon

- Low Miller capacitance

- Ultra low gate charge

- Avalanche energy rated

- Very rugged

 Kelvin source for easy drive

 Very low stray inductance

 Internal thermistor for temperature monitoring

Benefits

 Outstanding performance at high frequency operation

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Solderable terminals both for power and signal for

easy PCB mounting

 Low profile

 Each leg can be easily paralleled to achieve a phase

leg of twice the current capability

 RoHS Compliant

Full bridge

Super Junction MOSFET

Power Module

V

DSS

= 600V

R

DSon

= 24m max @ Tj = 25°C

I

D

= 95A @ Tc = 25°C

APTC60HM24T3G

APTC60HM24T3G – Rev 2 November, 2017

www.microsemi.com

2

–

7

Electrical Characteristics (per super junction MOSFET)

Symbol Characteristic Test Conditions Min Typ Max Unit

I

DSS

Zero Gate Voltage Drain Current V

GS

= 0V,V

DS

= 600V 350 µA

R

DS(on)

Drain – Source on Resistance

V

GS

= 10V, I

D

= 47.5A 24

m

V

GS

(

th

)

Gate Threshold Voltage V

GS

= V

DS

, I

D

= 5mA 2.1 3 3.9 V

I

GSS

Gate – Source Leakage Current V

GS

= ±20 V, V

DS

= 0V 200 nA

Dynamic Characteristics

(per super junction MOSFET)

Symbol Characteristic Test Conditions Min Typ Max Unit

C

iss

Input Capacitance

V

GS

= 0V ; V

DS

= 25V

f = 1MHz

14.4

nF

C

oss

Output Capacitance 17

Q

g

Total gate Charge

V

GS

= 10V

V

Bus

= 300V

I

D

= 95A

300

nC

Q

gs

Gate – Source Charge 68

Q

gd

Gate – Drain Charge 102

T

d(on)

Turn-on Delay Time

Inductive Switching (125°C)

V

GS

= 10V

V

Bus

= 400V

I

D

= 95A

R

G

= 2.5

21

ns

T

r

Rise Time 30

T

d(off)

Turn-off Delay Time 100

T

f

Fall Time 45

E

on

Turn-on Switching Energy

Inductive switching @ 25°C

V

GS

= 10V ; V

Bus

= 400V

I

D

= 95A ; R

G

= 2.5

1350

µJ

E

off

Turn-off Switching Energy 1040

E

on

Turn-on Switching Energy

Inductive switching @ 125°C

V

GS

= 10V ; V

Bus

= 400V

I

D

= 95A ; R

G

= 2.5

2200

µJ

E

off

Turn-off Switching Energy 1270

R

thJC

Junction to Case Thermal Resistance

0.27 °C/W

Source - Drain diode ratings and characteristics

(per super junction MOSFET)

Symbol Characteristic Test Conditions Min Typ Max Unit

I

S

Continuous Source current

(Body diode)

Tc = 25°C

95

A

Tc = 80°C

70

V

SD

Diode Forward Voltage V

GS

= 0V, I

S

= - 95A 1.2 V

dv/dt Peak Diode Recovery  4 V/ns

t

rr

Reverse Recovery Time

I

S

= - 95A

V

R

= 350V

di

S

/dt = 200A/µs

T

j

= 25°C 600 ns

Q

rr

Reverse Recovery Charge T

j

= 25°C 34 µC

 dv/dt numbers reflect the limitations of the circuit rather than the device itself.

I

S

 - 95A di/dt  200A/µs V

R

 V

DSS

T

j

 150°C

APTC60HM24T3G

APTC60HM24T3G – Rev 2 November, 2017

www.microsemi.com

3

–

7

Thermal and package characteristics

Symbol Characteristic Min Max Unit

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V

T

J

Operating junction temperature range

-40 150

°C

T

JOP

Recommended junction temperature under switching conditions -40 T

J

max -25

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 125

Torque Mounting torque To heatsink M4 2 3 N.m

Wt Package Weight 110 g

Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

k

∆R

25

/R

25

5

%

B

25/85

T

25

= 298.15 K 3952

K

∆B/B T

C

=100°C 4

%





























TT

B

R

T

11

exp

25

85/25

25

Package outline (dimensions in mm)

See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value at T

APTC60HM24T3G

APTC60HM24T3G

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