2
Electrical Specications
1. Small/Large -signal data measured in a fully de-embedded test xture form TA = 25°C.
2. Pre-assembly into package performance veried 100% on-wafer.
3. This nal package part performance is veried by a functional test correlated to actual performance at one or
more frequencies.
4. Specications are derived from measurements in a 50 Ω test environment. Aspects of the amplier performance
may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise
(Гopt) matching.
5. NF is measure on-wafer. Additional bond wires (-0.2nH) at Input could improve NF at some frequencies.
Table 1. RF Electrical Characteristics
TA=25°C, Zo=50 Ω, LO=+15dBm, IF=2GHz
Parameter
RF=18-30GHz, LO=9-15GHz RF=30-40GHz, LO=15-20GHz
Unit CommentMin Typ Max Min Typ Max
Conversion Loss, CL
[1]
11 12 13 dB
Input Third Order Intercept, IIP3
[1]
RF: 18-24GHz
10.5 11 12 dBm
Input Third Order Intercept, IIP3
[1]
RF: 24-30GHz
8.5 11 12 dBm
2LO-R Leakage, 2LO-R -45 -40 -40 dBm
2LO-I Leakage, 2LO-I -60 -50 -55 dBm
L-R Leakage, L-R -30 -35 dB
L-I Leakage, L-I -35 -30 dB
Note:
1.Production RF tested at 21, 23 and 26 GHz in upconverter conguration
All tested parameters are guaranteed with the following measurement accuracy:
RF=18-24 GHz: ±0.8 dBm for RF-leakage, ±2.5 dBm for IF-leakage, ±1.2dB for Conversion Loss, ±0.5 dBm for IIP3
RF=24-30 GHz: ±0.8 dBm for RF-leakage, ±4.0 dBm for IF-leakage, ±0.6 dB for Conversion Loss, ±0.5 dBm for IIP3
Table 2. Recommended Operating Range
1. Ambient operational temperature TA = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal
Resistance at backside temperature (Tb) = 25°C calculated from measured data.
Parameter Min. Typical Max. Unit Comments
RF Frequency, RFfreq 18 40 GHz
LO Frequency, LOfreq 9 20 GHz
IF Frequency, IFfreq DC 3.5 GHz
LO Power, LO +12 +15 +22 dBm
Min Ambient Operating Temp, Tmin -55 °C
Max Ambient Operating Temp, Tmax +125 °C
Absolute Minimum and Maximum Ratings
Table 3. Minimum and Maximum Ratings
Pin Min. Max. Unit Comments
RF CW Input Power, Pin 25 dB
Storage Temperature, Tstg -65 +150 °C
Maximum Assembly Temperature, Tmax 260 °C 20 second maximum
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
