IPD90N04S3-H4
OptiMOS
®
-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
1)
I
D
T
C
=25 °C, V
GS
=10 V
90 A
T
C
=100 °C,
V
GS
=10 V
2)
90
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
360
Avalanche energy, single pulse
2)
E
AS
I
D
=45 A
330 mJ
Avalanche current, single pulse
I
AS
-
90 A
Gate source voltage
V
GS
- ±20 V
Power dissipation
P
tot
T
C
=25 °C
115 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
40 V
R
DS(on),max
4.3
mΩ
I
D
90 A
Product Summary
PG-TO252-3-11
Type Package Marking
IPD90N04S3-H4 PG-TO252-3-11 QN04H4
Rev. 1.0 page 1 2008-08-01