MBR41H100CT, NRVBB41H100CT Series
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2
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100 V
Average Rectified Forward Current
(Rated V
R
) T
C
= 150°C
I
F(AV)
20
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz) T
C
= 145°C
I
FRM
40
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
350
A
Operating Junction Temperature (Note 1) T
J
+175 °C
Storage Temperature T
stg
*65 to +175 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/ms
Controlled Avalanche Energy (see test conditions in Figures 10 and 11) W
AVAL
400 mJ
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS (Per Diode Leg)
Characteristic Symbol Value Unit
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
R
q
JC
R
q
JA
2.0
70
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2)
(I
F
= 20 A, T
C
= 25°C)
(I
F
= 20 A, T
C
= 125°C)
(I
F
= 40 A, T
C
= 25°C)
(I
F
= 40 A, T
C
= 125°C)
v
F
0.80
0.67
0.90
0.76
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
C
= 125°C)
(Rated DC Voltage, T
C
= 25°C)
i
R
10
0.01
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
