2004 Nov 05 3
NXP Semiconductors Product data sheet
NPN Darlington transistor BC618
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 80 V
V
CES
collector-emitter voltage V
BE
= 0 V − 55 V
V
EBO
emitter-base voltage open collector − 12 V
I
C
collector current (DC) − 500 mA
I
CM
peak collector current − 800 mA
I
B
base current (DC) − 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 625 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 200 K/W
