MMT05A260T3

Semiconductor Components Industries, LLC, 2004
March, 2004 − Rev. 4
1 Publication Order Number:
MMT05A230T3/D
MMT05A230T3,
MMT05A260T3,
MMT05A310T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
High Surge Current Capability: 50 Amps 10 x 1000 µsec; for
Controlled Temperature Environments in the SMA package
The MMT05A230T3 Series is used to help equipment meet various
regulatory requirements including: Telcordia 1089, ITU K.20 &
K.21, IEC 950 and FCC Part 68
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Indicates UL Registered − File #E210057
Device Marking: MMT05A230T3: PBF; MMT05A260T3: PBG;
MMT05A310T3: PBJ
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Off−State Voltage − Maximum
MMT05A230T3
MMT05A260T3
MMT05A310T3
V
DM
170
200
270
Volts
Maximum Pulse Surge Short Circuit
Current Non−Repetitive
Double Exponential Decay Waveform
(Notes 1 and 2)
8 x 20 µsec
10 x 160 µsec
10 x 560 µsec
10 x 1000 µsec
I
PPS1
I
PPS2
I
PPS3
I
PPS4
150
100
70
50
A(pk)
Maximum Non−Repetitive Rate of
Change of On−State Current Double
Exponential Waveform,
I
PK
= 50 A, P
W
= 15 s
di/dt 100 A/µs
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
BIDIRECTIONAL TSPD
50 AMP SURGE
265 thru 365 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
MMT05A230T3 SMA 12 mm Tape and Reel
(5 K/Reel)
MMT05A260T3 SMA
12 mm Tape and Reel
(5 K/Reel)
MMT05A310T3 SMA 12 mm Tape and Reel
(5 K/Reel)
MT1 MT2
SMA
(No Polarity)
CASE 403D
xxx = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
MARKING DIAGRAM
xxx
AYW
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MMT05A230T3, MMT05A260T3, MMT05A310T3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Operating Temperature Range
Blocking or Conducting State
T
J1
40 to +125 °C
Overload Junction Temperature − Maximum Conducting State Only T
J2
+175 °C
Instantaneous Peak Power Dissipation (I
pk
= 50A, 10x1000 µsec @ 25°C) P
PK
2000 W
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristics Symbol Min Typ Max Unit
Breakover Voltage (Both polarities)
(dv/dt = 100 V/µs, I
SC
= 1.0 A, Vdc = 1000 V) MMT05A230T3
MMT05A260T3
MMT05A310T3
(+65°C)
MMT05A230T3
MMT05A260T3
MMT05A310T3
V
(BO)
265
320
365
280
340
400
Volts
Breakover Voltage (Both polarities)
(f = 60 Hz, I
SC
= 1.0 A(rms), V
OC
= 1000 V(rms), MMT05A230T3
R
I
= 1.0 k, t = 0.5 cycle) (Note 3) MMT05A260T3
MMT05A310T3
(+65°C)
MMT05A230T3
MMT05A260T3
MMT05A310T3
V
(BO)
265
320
365
280
340
400
Volts
Breakover Voltage Temperature Coefficient dV
(BO)
/dT
J
0.08 %/°C
Breakdown Voltage (I
(BR)
= 1.0 mA) Both polarities
MMT05A230T3
MMT05A260T3
MMT05A310T3
V
(BR)
190
240
280
Volts
Off State Current (V
D1
= 50 V) Both polarities
Off State Current (V
D2
= V
DM
) Both polarities
I
D1
I
D2
2.0
5.0
µA
On−State Voltage (I
T
= 1.0 A)
(PW 300 µs, Duty Cycle 2%) (Note 3)
V
T
1.53 3.0 Volts
Breakover Current (f = 60 Hz, V
DM
= 1000 V(rms), R
S
= 1.0 k)
Both polarities
I
BO
230 mA
Holding Current (Both polarities) (Note 3)
V
S
= 500 Volts; I
T
(Initiating Current) = 1.0 Amp
I
H
150 340 mA
Critical Rate of Rise of Off−State Voltage
(Linear waveform, V
D
= Rated V
BR
, T
J
= 25°C)
dv/dt 2000 V/µs
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V(rms) Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V(rms) Signal)
C
O
22
35
50
pF
3. Measured under pulse conditions to reduce heating.
MMT05A230T3, MMT05A260T3, MMT05A310T3
http://onsemi.com
3
+ Current
+ Voltage
V
TM
V
(BO)
I
(BO)
I
D2
I
D1
V
D1
V
D2
V
(BR)
I
H
Symbol Parameter
I
D1
, I
D2
Off State Leakage Current
V
D1
, V
D2
Off State Blocking Voltage
V
BR
Breakdown Voltage
V
BO
Breakover Voltage
I
BO
Breakover Current
I
H
Holding Current
V
TM
On State Voltage
Voltage Current Characteristic of TSPD
(Bidirectional Device)
Figure 1. Off−State Current versus Temperature
TEMPERATURE (°C)
140120100806040200
100
10
1
0.1
0.01
I
D1
, OFF−STATE CURRENT ( A)
Figure 2. Typical Breakdown Voltage versus
Temperature
TEMPERATURE (°C)
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
V
D1
= 50V
50200 2
0
70
320
300
280
260
240
220
200
180
160
340
MMT05A230T3
MMT05A260T3
MMT05A310T3
µ
30−10 10 40 60

MMT05A260T3

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Thyristor Surge Protection Devices (TSPD) 50A Surge 320V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union