SQM40016EM
www.vishay.com
Vishay Siliconix
S17-1886-Rev. A, 01-Jan-18
2
Document Number: 76558
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 40 - -
V
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.5 3.0 3.5
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
GS
= 0 V V
DS
= 40 V - - 1
μA
V
GS
= 0 V V
DS
= 40 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 40 V, T
J
= 175 °C - - 500 μA
On-state drain current
a
I
D(on)
V
GS
= 10 V V
DS
5 V 100 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 40 A - 0.00081 0.00100
V
GS
= 10 V I
D
= 40 A, T
J
= 125 °C - - 0.00152
V
GS
= 10 V I
D
= 40 A, T
J
= 175 °C - - 0.00184
Forward transconductance
b
g
fs
V
DS
= 15 V, I
D
= 40 A - 181 - S
Dynamic
b
Input capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 10 841 15 000
pF Output capacitance C
oss
- 2928 4000
Reverse transfer capacitance C
rss
- 198 270
Total gate charge
c
Q
g
V
GS
= 10 V V
DS
= 20 V, I
D
= 100 A
- 163 245
nC Gate-source charge
c
Q
gs
-46-
Gate-drain charge
c
Q
gd
-36-
Gate resistance R
g
f = 1 MHz 1 2.2 3.4
Turn-on delay time
c
t
d(on)
V
DD
= 20 V, R
L
= 0.2
I
D
100 A, V
GEN
= 10 V, R
g
= 1
-2440
ns
Rise time
c
t
r
- 215 330
Turn-off delay time
c
t
d(off)
-5990
Fall time
c
t
f
-3555
Source-Drain Diode Ratings and Characteristics
b
Pulsed current
a
I
SM
- - 420 A
Forward voltage V
SD
I
F
= 60 A, V
GS
= 0 V - 0.8 1.5 V
Body diode reverse recovery time t
rr
I
F
= 40 A, di/dt = 100 A/μs
- 92 185 ns
Body diode reverse recovery charge Q
rr
- 198 400 nC
Reverse recovery fall time t
a
-47-
ns
Reverse recovery rise time t
b
-45-
Body diode peak reverse recovery current I
RM(REC)
--4.4- A
