IXFH66N20Q Datasheet IXFH66N20Q | P1-P3

V

DSS

= 200 V

I

D25

=66A

R

DS(on)

= 40 m

ΩΩ

Ω

t

rr

≤ ≤

≤ 200 ns

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 200 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1 MΩ 200 V

V

GS

Continuous ±30 V

V

GSM

Transient ±40 V

I

D25

T

C

= 25°C66A

I

DM

T

C

= 25°C, pulse width limited by T

JM

264 A

I

AR

T

C

= 25°C66A

E

AR

T

C

= 25°C40mJ

E

AS

T

C

= 25°C 1.5 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

, 20 V/ns

T

J

≤ 150°C, R

G

= 2 Ω

P

D

T

C

= 25°C 400 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

M

d

Mounting torque 1.13/10 Nm/lb.in.

Weight TO-247 6 g

TO-268 4 g

TO-247 AD

G = Gate D = Drain

S = Source TAB = Drain

(TAB)

DS99039(04/03)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified) Min. Typ. Max.

V

DSS

V

GS

= 0 V, I

D

= 250 µA 200 V

V

GS(th)

V

DS

= V

GS

, I

D

= 4 mA 2.0 4.0 V

I

GSS

V

GS

= ±30 V

DC

, V

DS

= 0 ±100 nA

I

DSS

V

DS

= V

DSS

T

J

= 25°C25µA

V

GS

= 0 V T

J

= 125°C1mA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

40 m Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Preliminary data sheet

TO-268 (D3) (IXFT) Case Style

(TAB)

G

S

HiPerFET

TM

Power MOSFETs

Q-Class

N-Channel Enhancement Mode

Avalanche Rated High dv/dt, Low Q

g

Features

z

IXYS advanced low Q

g

process

z

International standard packages

z

Low gate charge and capacitance

- easier to drive

- faster switching

z

Low R

DS (on)

z

Unclamped Inductive Switching (UIS)

rated

z

Molding epoxies meet UL 94 V-0

flammability classification

Advantages

z

Easy to mount

z

Space savings

z

High power density

IXFH 66N20Q

IXFT 66N20Q

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 10 V; I

D

= 0.5 I

D25

, pulse test 30 45 S

C

iss

3700 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 860 pF

C

rss

260 pF

t

d(on)

20 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

18 ns

t

d(off)

R

G

= 2.0 Ω (External) 50 ns

t

f

14 ns

Q

g(on)

105 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

20 nC

Q

gd

44 nC

R

thJC

0.31 K/W

R

thCK

(TO-247) 0.25 K/W

Source-Drain Diode Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

V

GS

= 0 V 66 A

I

SM

Repetitive; 264 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

200 ns

Q

RM

I

F

= 25A, -di/dt = 100 A/µs, V

R

= 100 V 0.6 µC

I

RM

7A

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

TO-247 AD Outline

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

1 2 3

IXFH 66N20Q

IXFT 66N20Q

TO-268 Outline

Min. Recommended Footprint

Dimensions in mm and inches

IXFH 66N20Q

IXFT 66N20Q

Fig. 2. Extended Output Characteristics

@ 25 deg. C

0

30

60

90

12 0

15 0

18 0

0 3 6 9 12 15

V

D S

- Volts

I

D

- Amperes

V

G S

= 1 0V

8V

5V

6V

7V

Fig. 3. Output Characteristics

@ 125 Deg. C

0

10

20

30

40

50

60

70

012345 67

V

DS

- Volts

I

D

- Amperes

V

G S

= 1 0V

7V

5V

6V

Fig. 1. Output Characteristics

@ 25 Deg. C

0

10

20

30

40

50

60

70

0 0.5 1 1.5 2 2.5 3 3.5

V

DS

- Volts

I

D

- Amperes

V

G S

= 1 0V

7V

5V

6V

Fig. 4. R

DS(on)

Normalized to I

D25

Value vs.

Junction Temperature

0.4

0.7

1

1. 3

1. 6

1. 9

2.2

2.5

2.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degr ees Centigr ade

R

D S (on)

- Normalize

d

I

D

= 66A

I

D

= 33A

V

G S

= 1 0V

Fig. 6. Drain Current vs. Case

T emperature

0

10

20

30

40

50

60

70

-50 -25 0 25 50 75 100 125 150

T

C

- Degr ees Centigr ade

I

D

- Amperes

Fig. 5. R

DS(on)

Normalized to I

D25

Value vs. I

D

0.5

1

1. 5

2

2.5

3

3.5

0336699132165

I

D

- Amperes

R

D S (on)

- Normalize

d

T

J

= 1 25

º

C

T

J

= 25

º

C

V

G S

= 1 0V

IXFH66N20Q

IXFH66N20Q

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