ZXM64N03X
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
4
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
30 V
I
D
=-250µA, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
1
µA
V
DS
=30V, V
GS
=0V
Gate-Body Leakage I
GSS
±100
nA
V
GS
=± 20V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
1.0 V
I
D
=-250µA, V
DS
=V
GS
Static Drain-Source On-State
Resistance (1)
R
DS(on)
0.045
0.060
Ω
Ω
V
GS
=10V, I
D
=3.7A
V
GS
=4.5V, I
D
=1.9A
Forward Transconductance (3) g
fs
4.3 S V
DS
=10V,I
D
=-1.9A
DYNAMIC (3)
Input Capacitance C
iss
950 pF
V
DS
=25 V, V
GS
=0V,
f=1MHz
Output Capacitance C
oss
200 pF
Reverse Transfer Capacitance C
rss
50 pF
SWITCHING(2) (3)
Turn-On Delay Time t
d(on)
4.2 ns
V
DD
=5V, I
D
=3.7A
R
G
=6.2Ω,R
D
=4.0Ω
(Refer to test circuit)
Rise Time t
r
4.5 ns
Turn-Off Delay Time t
d(off)
20.5 ns
Fall Time t
f
8ns
Total Gate Charge Q
g
27 nC
V
DS
=24V,V
GS
=10V,
I
D
=3.7A
(Refer to test circuit)
Gate-Source Charge Q
gs
5nC
Gate Drain Charge Q
gd
4.5 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
0.95 V T
j
=25°C, I
S
=3.7A,
V
GS
=0V
Reverse Recovery Time (3) t
rr
24.5 ns T
j
=25°C, I
F
=3.7A,
di/dt= 100A/µs
Reverse Recovery Charge(3) Q
rr
19.1 nC
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
