AO6420
Symbol Min Typ Max Units
BV
DSS
60 V
1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
1 2.3 3 V
I
D(ON)
20 A
50 60
T
J
=125°C 85
60 75 mΩ
g
FS
13 S
V
SD
0.78 1 V
I
S
3 A
C
iss
450 540 pF
C
oss
60 pF
C
rss
25 pF
R
g
1.65 2 Ω
Q
g
(10V) 9.5 11.5 nC
Q
g
(4.5V) 4.3 5.5 nC
Q
gs
1.6 nC
Q
gd
2.2 nC
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Total Gate Charge
Input Capacitance
Drain-Source Breakdown Voltage
I
D
=250µA, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=60V, V
GS
=0V
N Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250µA
On state drain current
V
GS
=10V, V
DS
=5V
µA
Gate-Body leakage current
V
DS
=0V, V
GS
= ±20V
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
mΩ
V
GS
=4.5V, I
D
=3A
V
DS
=5V, I
D
=4.2A
I
S
=1A,V
GS
=0V
V
GS
=10V, I
D
=4.2A
Diode Forward Voltage
Gate Source Charge
Gate Drain Charge
Total Gate Charge
V
GS
=10V, V
DS
=30V, I
D
=4.2A
V
GS
=0V, V
DS
=30V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
SWITCHING PARAMETERS
Reverse Transfer Capacitance
Gate resistance
Output Capacitance
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
t
r
2.6 4 ns
t
D(off)
15.9 20 ns
t
f
2 3 ns
t
rr
25.1 35
ns
Q
rr
28.7 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Charge
I
F
=4.2A, dI/dt=100A/µs
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=4.2A, dI/dt=100A/µs
V
GS
=10V, V
DS
=30V, R
L
=7Ω,
R
GEN
=3Ω
Turn-On Rise Time
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t ≤ 10s thermal resistance rating.
Rev2: Feb. 2012
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
