MC74HC125AFG

© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 15
1 Publication Order Number:
MC74HC125A/D
MC74HC125A,
MC74HC126A
Quad 3-State Noninverting
Buffers
High−Performance Silicon−Gate CMOS
The MC74HC125A and MC74HC126A are identical in pinout to
the LS125 and LS126. The device inputs are compatible with standard
CMOS outputs; with pullup resistors, they are compatible with
LSTTL outputs.
The HC125A and HC126A noninverting buffers are designed to be
used with 3−state memory address drivers, clock drivers, and other
bus−oriented systems. The devices have four separate output enables
that are active−low (HC125A) or active−high (HC126A).
Features
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0 mA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the JEDEC Standard No. 7 A Requirements
Chip Complexity: 72 FETs or 18 Equivalent Gates
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
LOGIC DIAGRAM
HC125A
Active−Low Output Enables
HC126A
Active−High Output Enables
Y1
Y2
Y4
3
6
8
11
13
12
10
9
4
5
1
2
A1
OE1
A2
OE2
A3
OE3
A4
OE4
PIN 14 = V
CC
PIN 7 = GND
A1
OE1
A2
OE2
A3
OE3
A4
OE4
Y3
Y1
Y2
Y4
Y3
13
12
10
9
4
5
1
23
6
8
11
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
MARKING DIAGRAMS
x = 5, 6
A = Assembly Location
L, WL = Wafer Lot
Y, YY = Year
W, WW = Work Week
G or G = Pb−Free Package
TSSOP−14
DT SUFFIX
CASE 948G
SOIC−14 NB
D SUFFIX
CASE 751A
HC12xAG
AWLYWW
1
14
HC
12xA
ALYWG
G
1
14
(Note: Microdot may be in either location)
TSSOP−14SOIC−14 NB
PIN ASSIGNMENT
11
12
13
14
8
9
105
4
3
2
1
7
6
OE3
Y4
A4
OE4
V
CC
Y3
A3
OE2
Y1
A1
OE1
GND
Y2
A2
FUNCTION TABLE
HC125A
Inputs Output
AOE Y
HL H
LL L
XH Z
HC126A
Inputs Output
AOE Y
HH H
LH L
XL Z
MC74HC125A, MC74HC126A
http://onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage (Referenced to GND) –0.5 to +7.0 V
V
in
DC Input Voltage (Referenced to GND) –0.5 to V
CC
+ 0.5 V
V
out
DC Output Voltage (Referenced to GND) –0.5 to V
CC
+ 0.5 V
I
in
DC Input Current, per Pin ±20 mA
I
out
DC Output Current, per Pin ±35 mA
I
CC
DC Supply Current, V
CC
and GND Pins ±75 mA
P
D
Power Dissipation in Still Air SOIC Package†
TSSOP Package†
500
450
mW
T
stg
Storage Temperature –65 to +150
_C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(SOIC or TSSOP Package)
260
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
Derating: SOIC Package: –7 mW/_C from 65_ to 125_C
TSSOP Package: –6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage (Referenced to GND) 2.0 6.0 V
V
in
, V
out
DC Input Voltage, Output Voltage
(Referenced to GND)
0 V
CC
V
T
A
Operating Temperature, All Package Types –55 +125
_C
t
r
, t
f
Input Rise and Fall Time V
CC
= 2.0 V
(Figure 1) V
CC
= 4.5 V
V
CC
= 6.0 V
0
0
0
1000
500
400
ns
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND v (V
in
or V
out
) v V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.
MC74HC125A, MC74HC126A
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol Parameter Test Conditions
V
CC
V
–55 to
25_C
v 85_C v 125_C
Unit
V
IH
Minimum High−Level Input Voltage V
out
= V
CC
– 0.1 V
|I
out
| v 20 mA
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
V
IL
Maximum Low−Level Input Voltage V
out
= 0.1 V
|I
out
| v 20 mA
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
V
V
OH
Minimum High−Level Output
Voltage
V
in
= V
IH
|I
out
| v 20 mA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
V
in
= V
IH
|I
out
| v 3.6 mA
|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.2
3.7
5.2
V
OL
Maximum Low−Level Output
Voltage
V
in
= V
IL
|I
out
| v 20 mA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
in
= V
IL
|I
out
| v 3.6 mA
|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.4
0.4
0.4
I
in
Maximum Input Leakage Current V
in
= V
CC
or GND 6.0 ±0.1 ±1.0 ±1.0
mA
I
OZ
Maximum Three−State Leakage
Current
Output in High−Impedance State
V
in
= V
IL
or V
IH
V
out
= V
CC
or GND
6.0 ±0.5 ±5.0 ±10
mA
I
CC
Maximum Quiescent Supply Current
(per Package)
V
in
= V
CC
or GND
I
out
= 0 mA
6.0 4.0 40 160
mA
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input t
r
= t
f
= 6.0 ns)
Symbo
l
Parameter
V
CC
V
Guaranteed Limit
Unit
–55 to
25_C
v 85_C v 125_C
t
PLH
,
t
PHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 3)
2.0
3.0
4.5
6.0
90
36
18
15
115
45
23
20
135
60
27
23
ns
t
PLZ
,
t
PHZ
Maximum Propagation Delay, Output Enable to Y
(Figures 2 and 4)
2.0
3.0
4.5
6.0
120
45
24
20
150
60
30
26
180
80
36
31
ns
t
PZL
,
t
PZH
Maximum Propagation Delay, Output Enable to Y
(Figures 2 and 4)
2.0
3.0
4.5
6.0
90
36
18
15
115
45
23
20
135
60
27
23
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
2.0
3.0
4.5
6.0
60
22
12
10
75
28
15
13
90
34
18
15
ns
C
in
Maximum Input Capacitance 10 10 10 pF
C
out
Maximum 3−State Output Capacitance (Output in High−Impedance State) 15 15 15 pF
C
PD
Power Dissipation Capacitance (Per Buffer)*
Typical @ 25°C, V
CC
= 5.0 V
pF
30
* Used to determine the no−load dynamic power consumption: P
D
= C
PD
V
CC
2
f + I
CC
V
CC
.

MC74HC125AFG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC BUF NON-INVERT 6V SOEIAJ-14
Lifecycle:
New from this manufacturer.
Delivery:
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